nanocrystalline silicon carbide
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2021 ◽  
Author(s):  
Elchin Huseynov ◽  
Tural G. Naghiyev

Abstract Several thermal parameters were analyzed for nanocrystalline silicon carbide (3C-SiC) particles at the performed depending on the thermal processing rate. The hydroxyl groups on the surface of nanocrystalline 3C-SiC particles have been investigated as a function of temperature and heating rate. Specific heat capacity and Gibbs energy of silicon carbide nanoparticles have been determined in the temperature range of 300 ÷ 1270K at the various heating rates. The enthalpy and the entropy were calculated at different thermal processing rates (theoretical calculations are confirmed based on experimental results). Experminetal results obtained for all thermophysical parameters were comparatively studied at different thermal processing rates.PACS: 61.46.+w, 65.80.+n, 67.80.Gb


2020 ◽  
Vol 40 (13) ◽  
pp. 4396-4402
Author(s):  
Chenglong Pan ◽  
Limin Zhang ◽  
Weilin Jiang ◽  
Wahyu Setyawan ◽  
Liang Chen ◽  
...  

2020 ◽  
Vol 12 (5) ◽  
pp. 05016-1-05016-4
Author(s):  
A. V. Semenov ◽  
◽  
D. V. Lubov ◽  
M. V. Makhonin ◽  
◽  
...  

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