Study of charge transport in highly conducting polymers based on a random resistor network

2004 ◽  
Vol 333 (3-4) ◽  
pp. 322-327 ◽  
Author(s):  
Li-Ping Zhou ◽  
Bo Liu ◽  
Zhen-Ya Li
1992 ◽  
Vol 46 (19) ◽  
pp. 12137-12141 ◽  
Author(s):  
K. W. Yu ◽  
P. Y. Tong

2020 ◽  
Author(s):  
Jiawei Wang ◽  
Jiebin Niu ◽  
Bin Shao ◽  
Guanhua YANG ◽  
Congyan Lu ◽  
...  

Abstract Organic conjugated polymers demonstrate great potential in the transistor, solar cell and light-emitting diodes. The performances of those devices are fundamentally governed by charge transport within the active materials. However, the morphology-property relationships and the underpinning charge transport mechanism in polymers remain unclear. Particularly, whether the nonlinear charge transport in doped conducting polymers, i.e., anomalous non-Ohmic behaviors at low temperature, is appropriately formulated within non-Fermi liquid picture is not clear. In this work, via varying crystalline degrees of samples, we carried out systematic investigations on the charge transport nonlinearity in conducting polymers. Possible charge carriers’ dimensionality was discussed with experiments when varying the molecular chain’s crystalline orders. A heterogeneous-resistive-network (HRN) model was proposed based on the tied link between Fermi liquids (FL) and Luttinger liquids (LL), related to the high-ordered crystalline zones and weak-coupled amorphous regions, respectively. This mesoscopic HRN model is experimentally supported by precise electrical and microstructural characterizations, together with theoretic evaluations. Significantly, such model well describes the nonlinear transport behaviors in conducting polymers universally and provides new insights into the microstructure-correlated charge transport in organic conducting/semiconducting systems.


2000 ◽  
Vol 612 ◽  
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
F. Fantini ◽  
A. Scorzoni ◽  
...  

AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.


1990 ◽  
Vol 41 (7) ◽  
pp. 4610-4618 ◽  
Author(s):  
A. B. Harris ◽  
Yigal Meir ◽  
Amnon Aharony

2009 ◽  
Vol 38 (12) ◽  
pp. 3339 ◽  
Author(s):  
Judith F. Rubinson ◽  
Yohani P. Kayinamura

2011 ◽  
Vol 199-200 ◽  
pp. 44-53 ◽  
Author(s):  
Sergiy Kalnaus ◽  
Adrian S. Sabau ◽  
Sarah Newman ◽  
Wyatt E. Tenhaeff ◽  
Claus Daniel ◽  
...  

2004 ◽  
Vol 415 (1) ◽  
pp. 115-124 ◽  
Author(s):  
A. B. Kaiser∗ ◽  
S. A. Rogers ◽  
Y. W. Park

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