Investigation on mechanical and temperature dependent electrical properties of potassium hydrogen oxalate oxalic acid dihydrate single crystal

2020 ◽  
Vol 384 (19) ◽  
pp. 126475 ◽  
Author(s):  
K. Mahendra ◽  
N.K. Udayashankar
Keyword(s):  
Electrical Properties ◽  
Oxalic Acid ◽  
Single Crystal ◽  
Temperature Dependent ◽  
Oxalic Acid Dihydrate ◽  
Potassium Hydrogen

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

2019 ◽  
Vol 40 (1) ◽  
pp. 012801 ◽  
Author(s):  
Tsung-Han Yang ◽  
Houqiang Fu ◽  
Hong Chen ◽  
Xuanqi Huang ◽  
Jossue Montes ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent

scholarly journals Tuning the Electrical Properties of NiO Thin Films by Stoichiometry and Microstructure

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Loss ◽  
Single Crystal ◽  
Oxygen Stoichiometry ◽  
High Resistivity ◽  
Edge Structure ◽  
Glass Substrates ◽  
Lower Resistivity

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.

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