On the twinning occurrence in bulk semiconductor crystal growth

2010 ◽  
Vol 62 (12) ◽  
pp. 955-960 ◽  
Author(s):  
Thierry Duffar ◽  
Amal Nadri
Keyword(s):  
Crystal Growth ◽  
Semiconductor Crystal ◽  
Bulk Semiconductor

Magnet system for providing a forced convection for semiconductor crystal growth under microgravity

1998 ◽  
Author(s):  
Ch. Stenzel ◽  
H. Lenski ◽  
P. Dold ◽  
Th. Kaiser ◽  
K.-W. Benz ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Forced Convection ◽  
Semiconductor Crystal ◽  
Magnet System

scholarly journals Semiconductor Crystal Growth under the Influence of Magnetic Fields

2019 ◽  
Vol 55 (2) ◽  
pp. 1900115
Author(s):  
Christiane Frank-Rotsch ◽  
Natasha Dropka ◽  
Frank-Michael Kießling ◽  
Peter Rudolph
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Semiconductor Crystal

Semiconductor Crystal Growth and Segregation Problems on Earth And in Space

1981 ◽  
Vol 9 ◽  
Author(s):  
Harry C. Gatos
Keyword(s):  
Crystal Growth ◽  
Growth Parameters ◽  
Structural Defects ◽  
Full Potential ◽  
Semiconductor Crystal ◽  
Growth Property ◽  
Materials Properties ◽  
Solid State Electronics ◽  
Gravitational Forces ◽  
Semiconductor Compounds

ABSTRACTCrystals grown from the melt exhibit compositional and structural defects which limit the exploitation of their full potential in solid state electronics. The origin of these defects is related primarily to gravity-induced convective currents in the melt. In semiconductor compounds additional problems are introduced from variations in stoichiometry. Progress has been made recently in relating qualitatively, and in some instances quantitatively, the growth parameters to the materials properties of the crystals, and in turn to their electronic properties. Overcoming the presence of gravitational forces in space eliminates or minimizes convective interference and, thus, the quantitative assessment of the key growth parameters controlling the chemical and structural perfection of single crystals becomes possible. Results (obtained on earth) will be presented on the growth-property relationships of elemental and compound semiconductors. The advantages, as well as the limitations, that zero gravity conditions present for crystal growth will be discussed.

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