Analysis and control of semiconductor crystal growth with reflectance-difference spectroscopy and spectroellipsometry

1991 ◽  
Author(s):  
David E. Aspnes
Keyword(s):  
Crystal Growth ◽  
Difference Spectroscopy ◽  
Semiconductor Crystal ◽  
Reflectance Difference Spectroscopy ◽  
And Control

Reflectance-Difference Spectroscopy: A New Look At Semiconductor Crystal Growth By MBE And OMCVD

1989 ◽  
Author(s):  
D. E. Aspnes ◽  
R. Bhat ◽  
E. Colas ◽  
L. T. Florez ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Difference Spectroscopy ◽  
Semiconductor Crystal ◽  
Reflectance Difference Spectroscopy ◽  
New Look

Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth

1988 ◽  
Vol 52 (12) ◽  
pp. 957-959 ◽  
Author(s):  
D. E. Aspnes ◽  
J. P. Harbison ◽  
A. A. Studna ◽  
L. T. Florez
Keyword(s):  
Crystal Growth ◽  
Real Time ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy ◽  
Spectroscopy System

In situ monitoring of crystal growth by reflectance difference spectroscopy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 47-55 ◽  
Author(s):  
E. Colas ◽  
D.E. Aspnes ◽  
R. Bhat ◽  
A.A. Studna ◽  
J.P. Harbison ◽  
...  
Keyword(s):  
Crystal Growth ◽  
In Situ Monitoring ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD

1990 ◽  
Author(s):  
E. Colas ◽  
D. E. Aspnes ◽  
R. Bhat ◽  
A. A. Studna ◽  
M. A. Koza ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth

1991 ◽  
Vol 222 ◽  
Author(s):  
D. E. Aspnes ◽  
R. Bhat ◽  
E. Colas ◽  
L. T. Florez ◽  
S. Gregory ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Chemical Vapor ◽  
Optical Methods ◽  
Surface Processes ◽  
Microstructural Properties ◽  
Difference Spectroscopy ◽  
Semiconductor Crystal ◽  
Dynamic Surface ◽  
Control Growth ◽  
Reflectance Difference Spectroscopy

ABSTRACTA variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. New capabilities for surface analysis are being provided by developing techniques such as reflectance-difference spectroscopy (RDS), which use intrinsic symmetries to suppress ordinarily dominant bulk contributions. Bulk and microstructural properties such as compositions and layer thicknesses can be determined by techniques such as spectroellipsometry (SE), which return information integrated over the penetration depth of light. Recent advances include the application of reflectance to monitor dynamic surface processes, RDS to characterize (001) GaAs surfaces in OMCVD environments, and SE to control growth of AlxGa1-x, As materials and structures.

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