Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed
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2007 ◽
Vol 46
(No. 25)
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pp. L602-L604
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Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material
2011 ◽
Vol 50
(2R)
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pp. 024102
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2016 ◽
2020 ◽
Vol 8
(19)
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pp. 6364-6369
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2010 ◽
Vol 10
(11)
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pp. 7040-7044
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2001 ◽
Vol 40
(Part 1, No. 3B)
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pp. 1565-1568
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2012 ◽
Vol 51
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pp. 031201
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