Enhanced optical properties of TiN-based spectrally selective solar absorbers deposited at a high substrate temperature

2017 ◽  
Vol 163 ◽  
pp. 91-97 ◽  
Author(s):  
Xiang-Hu Gao ◽  
Zhi-Ming Guo ◽  
Qing-Fen Geng ◽  
Peng-Jun Ma ◽  
Ai-Qin Wang ◽  
...  
2017 ◽  
Vol 886 ◽  
pp. 24-31 ◽  
Author(s):  
Allah Bakhsh ◽  
Iftikhar Hussain Gul ◽  
Ashari Maqsood ◽  
Shang Hsuan Wu ◽  
Ching Hsiang Chan ◽  
...  

One-dimensional CdZnS nanostructures have been synthesized through the sublimation. Effect of high substrate temperature on morphology, structural and optical properties of these nanostructures has been studied. X-Ray diffraction peak intensity, lattice parameters, crystallite size decreased with an increase in substrate temperature. The morphology changed with the increase in the substrate temperature. Raman Spectroscopy confirmed the existence of constituent elements in CdZnS solid solution and an increase of Zn concentration with the rise in substrate temperature. The nanostructures exhibited strong photoluminescence emission in the green light region with a substrate temperature-dependent blue shift of 53 meV in emission energy. The Stoke’s shift energy raised from 45 meV to 302 meV as the substrate temperature increased from 510 °C to 550 °C. The stoichiometric deviancies, crystallite size, and quantum confinement effects resulted into an increase in the optical band gap from 2.4 eV to 2.71 eV. The results showed that CdZnS nanostructures could be potential candidates for nanostructure based optoelectronics and photovoltaic devices.


1996 ◽  
Vol 420 ◽  
Author(s):  
O. A. Golikova ◽  
A. N. Kuznetsov ◽  
V. Kh. Kudojarova ◽  
M. M. Kazanin ◽  
A. Ikosarev

AbstractDc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.


1994 ◽  
Vol 2 (3) ◽  
pp. 211-219 ◽  
Author(s):  
Masato Nishikuni ◽  
Tsuyoshi Takahama ◽  
Shingo Okamoto ◽  
Kunimoto Ninomiya ◽  
Hidenori Nishiwaki ◽  
...  

2014 ◽  
Vol 115 (17) ◽  
pp. 17B752 ◽  
Author(s):  
Kim Kong Tham ◽  
Shintaro Hinata ◽  
Shin Saito ◽  
Migaku Takahashi

1988 ◽  
Vol 132 ◽  
Author(s):  
S. H. Liou ◽  
C. H. Chen ◽  
H. S. Chen ◽  
A. R. Kortan ◽  
C. L. Chien

ABSTRACTThe coercivity of granular Fe embedded inside an SiO2 matrix was as high as 3 kOe at 6K, and 1.1 kOe at 300K. In this study, we observed a linear temperature (T) dependence of the coercivity for the samples prepared at a high substrate temperature (773K), and a T1/2 dependence of the coercivity for the sample prepared at a low substrate temperature (473K). This indicates that the microstructures of films prepared at different substrate temperatures are not the same. This phenomenon can be explained if we assume that there are interconnections between particles for the sample prepared at a high substrate temperature. We looked for evidence of interconnections between particles with transmission electron microscopy (TEM).


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