Effect of substrate temperature on structural and thermoelectric properties of RF magnetron sputtered SnSe thin film

SnSe is a potential thermoelectric material, but there are few reports about the thermoelectric properties of the film. In this work, SnSe thin films were deposited on glass substrates by RF magnetron sputtering from SnSe alloy target. The effect of substrate temperature on the structural and thermoelectric properties was investigated. It was found that the columnar grains and the surface roughness of the films increase with increasing the substrate temperature. The film deposited at 558 K exhibited a high crystalline quality and stoichiometric composition, which has a maximum power factor of 1.4[Formula: see text]uWcm[Formula: see text]K[Formula: see text] at 575[Formula: see text]K. The results of this work demonstrate the importance of high substrate temperature to obtain high thermoelectric performance SnSe films.

Effect of High Substrate Temperature on Morphology, Structural and Optical Properties of CdZnS Nanostructures

One-dimensional CdZnS nanostructures have been synthesized through the sublimation. Effect of high substrate temperature on morphology, structural and optical properties of these nanostructures has been studied. X-Ray diffraction peak intensity, lattice parameters, crystallite size decreased with an increase in substrate temperature. The morphology changed with the increase in the substrate temperature. Raman Spectroscopy confirmed the existence of constituent elements in CdZnS solid solution and an increase of Zn concentration with the rise in substrate temperature. The nanostructures exhibited strong photoluminescence emission in the green light region with a substrate temperature-dependent blue shift of 53 meV in emission energy. The Stoke’s shift energy raised from 45 meV to 302 meV as the substrate temperature increased from 510 °C to 550 °C. The stoichiometric deviancies, crystallite size, and quantum confinement effects resulted into an increase in the optical band gap from 2.4 eV to 2.71 eV. The results showed that CdZnS nanostructures could be potential candidates for nanostructure based optoelectronics and photovoltaic devices.