Effect of post annealing on MgO thin film prepared on silicon(001) substrate in high oxygen pressure and high substrate temperature by pulsed laser deposition

2011 ◽  
Vol 18 (2) ◽  
pp. 022018
Author(s):  
Satoru Kaneko ◽  
Kensuke Akiyama ◽  
Takeshi Ito ◽  
Manabu Yasui ◽  
Takeshi Ozawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
High Substrate Temperature ◽  
Laser Deposition ◽  
High Substrate ◽  
Post Annealing ◽  
High Oxygen Pressure

Nano-Polycrystalline Vanadium Oxide Thin Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 8 (5) ◽  
pp. 2604-2608 ◽  
Author(s):  
Y. L. Wang ◽  
M. C. Li ◽  
X. K. Chen ◽  
G. Wu ◽  
J. P. Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.

INFLUENCE OF THE TECHNICAL PARAMETERS ON BIOACTIVE FILMS DEPOSITED BY PULSED LASER

2007 ◽  
Vol 14 (02) ◽  
pp. 283-291 ◽  
Author(s):  
YAFAN ZHAO ◽  
CHUANZHONG CHEN ◽  
MINGDA SONG ◽  
JIAN LIU
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Atmosphere Pressure ◽  
Technical Parameters ◽  
Novel Technique ◽  
Post Annealing

Pulsed laser deposition (PLD), which is a novel technique in producing thin films in the recent years, shows unique advantages for the deposition of bioactive films. Research states of the technical parameters of the pulsed laser deposited bioactive films, including substrate temperature, atmosphere pressure, energy density, wavelength, post-annealing, target, deposition rate, and thickness of the films, are systematically reviewed. Processing-microstructure-property relationships of bioactive films by pulsed laser deposition are discussed. The application prospect is pointed as well.

Sign in / Sign up

Export Citation Format

Share Document