Electric field effect on the linear and nonlinear intersubband refractive index changes in asymmetrical semiparabolic and symmetrical parabolic quantum wells

2005 ◽  
Vol 37 (4) ◽  
pp. 261-272 ◽  
Author(s):  
Li Zhang
2016 ◽  
Vol 30 (30) ◽  
pp. 1650209 ◽  
Author(s):  
S. Sakiroglu

In this paper, we investigate theoretically the effects of electric field on the linear and nonlinear optical properties of Morse quantum wells considering a two-level system. The effective mass approximation and the envelope function approach are used to calculate the energy levels and wave functions. The analytical expressions of the optical properties are obtained by using the compact density-matrix approach. The linear and third-order nonlinear optical absorption coefficients and the refractive index changes are investigated as a function of the incident photon energy for several configurations of the structural parameter and the applied electric field. Numerical results, presented for a typical GaAs/AlGaAs quantum well, reveal that the electric field has a significant effect on the optical characteristics of these structures and intersubband transitions can be modified by tuning the structural range parameter of the potential.


2009 ◽  
Vol 16 (01) ◽  
pp. 11-17
Author(s):  
L. ZHANG

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN / GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.


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