Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

2018 ◽  
Vol 116 ◽  
pp. 1-8 ◽  
Author(s):  
Gaoqiang Deng ◽  
Yuantao Zhang ◽  
Ye Yu ◽  
Long Yan ◽  
Pengchong Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diode ◽  
Optical And Electrical Properties ◽  
Yellow Light ◽  
Free Standing ◽  
Light Emitting

Dependence of Yellow Phosphor on Optical and Electrical Properties of the White Light Emitting Diode Chip

2006 ◽  
Vol 510-511 ◽  
pp. 106-109 ◽  
Author(s):  
Chang Sik Son ◽  
Ho Jung Chang ◽  
Kang Hyun Jaekal ◽  
Young Chol Chang ◽  
Soo Wohn Lee
Keyword(s):  
Electrical Properties ◽  
Bias Voltage ◽  
White Light ◽  
Light Emitting Diode ◽  
White Led ◽  
Optical And Electrical Properties ◽  
Maximum Luminance ◽  
Mixing Conditions ◽  
Light Emitting ◽  
Yellow Phosphor

We prepared the surface mounted white light emitting diode (LED) chips by using yellow phosphors on the blue LED chip. The optical and electrical properties of prepared white LED chips were investigated. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ration of epoxy: yellow phosphor = 97 : 3 wt %. The maximum luminance and light emitting efficiency are above 80,000 cd/m2 and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The flowing current of the white LED chip is about 30 mA at 2.9 V.

Effect of V-pit Size on Optical and Electrical Properties of InGaN/AlGaN Near-ultraviolet Light Emitting Diode

2017 ◽  
Vol 38 (6) ◽  
pp. 735-741
Author(s):  
聂晓辉 NIE Xiao-hui ◽  
王小兰 WANG Xiao-lan ◽  
莫春兰 MO Chun-lan ◽  
张建立 ZHANG Jian-li ◽  
潘 拴 PAN Shuan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Near Ultraviolet

Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

2018 ◽  
Vol 57 (11) ◽  
pp. 2835 ◽  
Author(s):  
Dan Han ◽  
Shufang Ma ◽  
Zhigang Jia ◽  
Peizhi Liu ◽  
Wei Jia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Light Emitting Diode ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Square Array

scholarly journals Red Light-Emitting Diodes with All-Inorganic CsPbI3/TOPO Composite Nanowires Color Conversion Films

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Lung-Chien Chen ◽  
Yi-Tsung Chang ◽  
Ching-Ho Tien ◽  
Yu-Chun Yeh ◽  
Zong-Liang Tseng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diode ◽  
Red Light ◽  
Trioctylphosphine Oxide ◽  
Optical And Electrical Properties ◽  
Colloidal Solutions ◽  
High Quality ◽  
Light Emitting ◽  
Hot Injection ◽  
Color Conversion

AbstractThis work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.

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