The Intrinsic Electrochemical Behavior of Layered Cu2WSe4 Nanoparticles

Nanoplates of Cu2WSe4 (~50 nm) were synthesized via a hot-injection method by one-pot selenation of WCl6 and Cu(acac)2. This synthetic route provided another path towards deciphering the intrinsic electrochemical properties of Cu2MSe4 (M = Mo or W), where their nanoparticles were previously synthesized via a metathesis route. Cation-dependent cathodic events and surface activation anodic events were identified by cyclic voltammetry in acetonitrile.

Phase evolution of all-inorganic perovskite nanowires during its growth from quantum dots

All-inorganic lead-halide perovskites have emerged as an exciting material owing to their excellent optoelectronic properties and high stability over hybrid organometallic perovskites. Nanowires of these materials, in particular, have shown great promise for optoelectronic applications due to their high optical absorption coefficient and low defect state density. However, the synthesis of the most promising alpha-Cesium lead iodide (α-CsPbI3) nanowires is challenging as it is metastable and spontaneously converts to a non-perovskite δ-phase. The hot-injection method is one of the most facile, well-controlled, and commonly used approaches for synthesizing CsPbX3 nanostructures. But the exact mechanism of growing these nanowires in this technique is not clear. Here, we show that the hot-injection method produces photoactive phases of quantum dots (QDs) and nanowires of CsPbBr3, and QDs of CsPbI3, but CsPbI3 nanowires are grown in their non-perovskite δ-phase. Monitoring the nanowire growth during the hot-injection technique and through detailed characterization, we establish that CsPbI3 nanowires are formed in the non-perovskite phase from the beginning rather than transforming after its growth from perovskite to a non-perovskite phase. We have discussed a possible mechanism of how non-perovskite nanowires of CsPbI3 grow at the expense of photoactive perovskite QDs. Our findings will help to synthesize nanostructures of all-inorganic perovskites with desired phases, which is essential for successful technological applications.

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

In this present work, CuNiCoS4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS4. The obtained CuNiCoS4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I–V and C–V characteristics. The fabricated Au/CuNiCoS4/p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C–V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.

Applied to anti-counterfeiting and flexible composite utilizing photoluminescence properties of CdSe/ZnS nanocrystal quantum dots via hot-injection

Quantum dots with excellent luminescence properties are being studied in a wide range of fields, such as displays, sunlight, and bio-imaging; although quantum dots are the same material, unlike bulk materials, as their size decreases their optical and electrical properties change due to the quantum confinement effect. In this study, CdSe quantum dots were synthesized by a well-known hot-injection method and a ZnS shell layer was formed on the surface of the CdSe quantum dot core to enhance the properties, thereby synthesizing the CdSe/ZnS core/shell structure. At this time, the quantum yield increased more than twice, and the emission line width decreased. When anti-counterfeiting ink was made using quantum dots with enhanced luminescence characteristics and applied to a bank note, it was impossible to check with the naked eye, but letters and emblems could be confirmed under UV light. In addition, a composite made by mixing with a silicon-based polymer showed excellent flexibility; and, when applied on a blue LED chip, a single wavelength and bright light peculiar to quantum dots were realized.

Discovery of the Crystal Phase Transition on Lead-free Cesium Manganese Bromine Perovskite Nanocrystal by Solvent Concentration

We have been demonstrated the crystal phase transition for lead-free cesium manganese bromine perovskite nanocrystal synthesized by the modified hot-injection method due to change the concentration of solvent (trioctylphosphine; TOP). The compositions to be synthesized were determined by the amount of TOP solvent, and the structure phase of nanocrystal was changed from hexagonal CsMnBr3 to tetragonal Cs3MnBr5 as the amount of TOP solvent increased. The emission peaks of CsMnBr3 and Cs3MnBr5 nanocrystals were observed at 650 nm (red) and 520 nm (green), respectively. After a durability test at 85 °C and 85% humidity for 24 h, the lead-free perovskite CsMnBr3 nanocrystal powder maintained its initial emission intensity, and the metal halide Cs3MnBr5 nanocrystal powder exhibited an increase in red emission due to the post-synthesis of CsMnBr3 nanocrystals.