Structural transformation and tuning of electronic transitions by W-doping in VO2 thin films

2021 ◽  
Vol 154 ◽  
pp. 106883
Author(s):  
Komal Mulchandani ◽  
Ankit Soni ◽  
Komal Pathy ◽  
K.R. Mavani
2021 ◽  
pp. 150056
Author(s):  
Hyuk Jin Kim ◽  
Young Hwan Choi ◽  
Dongkyu Lee ◽  
In Hak Lee ◽  
Byoung Ki Choi ◽  
...  
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2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


2014 ◽  
Vol 562 ◽  
pp. 568-573 ◽  
Author(s):  
Yu-Xia Ji ◽  
Shu-Yi Li ◽  
Gunnar A. Niklasson ◽  
Claes G. Granqvist

2012 ◽  
Vol 101 (19) ◽  
pp. 191905 ◽  
Author(s):  
Zhangli Huang ◽  
Sihai Chen ◽  
Chaohong Lv ◽  
Ying Huang ◽  
Jianjun Lai

2017 ◽  
Vol 122 (4) ◽  
pp. 045304 ◽  
Author(s):  
Anna Krammer ◽  
Arnaud Magrez ◽  
Wolfgang A. Vitale ◽  
Piotr Mocny ◽  
Patrick Jeanneret ◽  
...  

2018 ◽  
Vol 6 (2) ◽  
pp. 026409
Author(s):  
Yunfeng Guo ◽  
Yuzhi Zhang ◽  
Liangmiao Zhang ◽  
Xinrui Lv ◽  
Lingnan Wu ◽  
...  

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