scholarly journals Correction to “Imaging Nanometer Phase Coexistence at Defects During the Insulator–Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography”

Nano Letters ◽  
2021 ◽  
Author(s):  
Luciana Vidas ◽  
Christian M. Günther ◽  
Timothy A. Miller ◽  
Bastian Pfau ◽  
Daniel Perez-Salinas ◽  
...  
Nano Letters ◽  
2018 ◽  
Vol 18 (6) ◽  
pp. 3449-3453 ◽  
Author(s):  
Luciana Vidas ◽  
Christian M. Günther ◽  
Timothy A. Miller ◽  
Bastian Pfau ◽  
Daniel Perez-Salinas ◽  
...  

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.


2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.


2019 ◽  
Vol 10 (4) ◽  
pp. 775-780 ◽  
Author(s):  
D. P. Lelyuk ◽  
A. D. Mishin ◽  
S. S. Maklakov ◽  
A. M. Makarevich ◽  
D. I. Sharovarov

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 851-863 ◽  
Author(s):  
Tiziana Cesca ◽  
Carlo Scian ◽  
Emilija Petronijevic ◽  
Grigore Leahu ◽  
Roberto Li Voti ◽  
...  

In situ XRD and IR optical measurements demonstrate the coexistence of M1 and R phases during the SMT transition of VO2 thin films.


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