Experimental investigation of the kink effect and the low frequency noise properties in pseudomorphic HEMT’s

2005 ◽  
Vol 49 (6) ◽  
pp. 915-922 ◽  
Author(s):  
F. Principato ◽  
A. Caddemi ◽  
G. Ferrante
Keyword(s):  
Experimental Investigation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Kink Effect

Determination of a Low Frequency Noise Source's Parameters by a Space Intensity Sensor

1993 ◽  
Vol 12 (1) ◽  
pp. 25-29
Author(s):  
A.N. Ivannikov ◽  
V.I. Pavlov ◽  
S.V. Holodova
Keyword(s):  
Experimental Data ◽  
Experimental Investigation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Acoustic Sensor ◽  
Low Frequency Noise ◽  
Source Power ◽  
First Results ◽  
Basic Equations

The aim of this paper is to present the basic equations and the first results of an experimental investigation using the space intensity sensor. We offer a multi-element acoustic sensor that gives the opportunity to find the source's parameters (distance between the observer and the source, direction to the source, power of its radiation, its multipole type). It is very important for the diagnosis of natural low frequency sources. The results of the measurements of the sound multipole source's parameters are presented. The test's experimental data correspond well to the real controlled parameters.

Experimental Investigation of Low-Frequency Noise and Vibration in a Bus

2020 ◽  
Author(s):  
Krishnamoorthy Selvaraj ◽  
Prasad Padavala ◽  
Karalmarx Rajamohan ◽  
Jaganmohan Rao Medisetti
Keyword(s):  
Experimental Investigation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise And Vibration

ON THE 1/f NOISE IN 0.15 μm FULLY DEPLETED SOI/MOS TRANSISTORS

2002 ◽  
Vol 02 (03) ◽  
pp. L253-L256 ◽  
Author(s):  
S. HAENDLER ◽  
J. JOMAAH ◽  
F. BALESTRA
Keyword(s):  
Low Frequency ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Mos Transistors ◽  
Fully Depleted ◽  
Kink Effect

The low frequency noise (LFN) behavior in 0.15 μm N-channel fully depleted SOI/MOS transistors is investigated, both in ohmic and saturation regimes. The extraction of the interface trap density is also carried out. Moreover, the existence of a moderate kink effect and its influence on LF noise in fully depleted devices are shown.

Experimental investigation of low-frequency noise of 8-MM Gunn oscillators

1989 ◽  
Vol 32 (7) ◽  
pp. 673-678
Author(s):  
I. A. Kravtsov ◽  
V. M. Malyshev ◽  
A. V. Meshcheryakov
Keyword(s):  
Experimental Investigation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gunn Oscillators

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

Simulation of Low Frequency Noise in a CCTWT

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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