Reeves’s circular transmission line model and its scope of application to extract specific contact resistance

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance of a planar ohmic contact. It is proposed that in the case of a typical Au-Ge-Ni alloyed ohmic contact, a more realistic model would need to take into account the presence of the alloyed layer at the metal-semiconductor interface. An alternative is described which is based on three contact layers and the two interfaces between them, thus forming a Tri-Layer Transmission Line Model (TLTLM). Expressions are given for the contact resistance Rc and the contact end resistance Re of this structure, together with a current division factor, f. Values for the parameters of this model are inferred from experimentally reported values of Rc and Re for two types of contact.

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Modified Linear Transmission Line Model Test Structure for Determining Specific Contact Resistance

MRS Advances ◽

10.1557/adv.2016.77 ◽

2016 ◽

Vol 1 (2) ◽

pp. 157-162

Author(s):

G.K. Reeves ◽

Y. Pan ◽

P.W. Leech ◽

A.S. Holland

Keyword(s):

Contact Resistance ◽

Transmission Line ◽

Model Test ◽

Element Model ◽

Test Structure ◽

Specific Contact Resistance ◽

Transmission Line Model ◽

Line Model ◽

Linear Pattern ◽

Specific Contact

ABSTRACTA modified design of the transmission line model test structure uses the simple calculation of specific contact resistance, ρc, based on a two contact linear pattern but without the requirement of a mesa etch. This modified structure uses a linear TLM with semicircular terminations at each end. The function of the semicircular terminations is to confine the fringing fields at the ends of the linear TLM contacts. Simple analytical equations for determining ρc have been developed on the basis of the modified linear TLM pattern. These calculations have shown good agreement with a finite element model (FEM) of the modified TLM test structure using typical parameters for metal/ SiC contacts.

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A New Electrical Model for Calculating the Sheet Resistance Parameter in Alloyed Ohmic Contacts

MRS Proceedings ◽

10.1557/proc-337-275 ◽

1994 ◽

Vol 337 ◽

Cited By ~ 1

Author(s):

Geoffrey K. Reeves ◽

H. Barry Harrison

Keyword(s):

Transmission Line ◽

Sheet Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Metal Layer ◽

Semiconductor Layer ◽

Specific Contact Resistance ◽

Transmission Line Model ◽

Line Model ◽

Specific Contact

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance ρc and the sheet resistance Rsk beneath a planar ohmic contact. In the case of an alloyed ohmic contact, a more realistic three layer (Tri-Layer Transmission Line Model (TLTLM)) can be used for the analysis. This model is based on three layers (metal layer, alloyed semiconductor layer and the unalloyed semiconductor layer) and the two interfaces between them. By using appropriate TLTLM parameters, it is possible to calculate the sheet resistance Rsk that has been experimentally derived from the standard TLM. The new TLTLM model predicts that values of Rsk greater and less than Rsh (the unmodified epitaxial layer sheet resistance) are possible in agreement with experimentally reported observations.

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Ohmic Contacts on N-Type Hg0.4Cd0.6Te.

MRS Proceedings ◽

10.1557/proc-216-155 ◽

1990 ◽

Vol 216 ◽

Cited By ~ 3

Author(s):

Patrick W. Leech ◽

Geoffrey K. Reeves ◽

Martyn H. Kibel

Keyword(s):

Contact Resistance ◽

Transmission Line ◽

Schottky Barrier ◽

Optical Communications ◽

Ohmic Contacts ◽

Specific Contact Resistance ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Transmission Line Model ◽

Specific Contact

ABSTRACTThe electrical characteristics of In, Sn, Au and Pt contacts on n-type Hg0.4Cd0.6Te formed in the presence and absence of prior In2+ implantation have been examined. Measurements of specific contact resistance made using a Transmission Line Model have shown that the unimtlanted In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 junctions gave values of pc = 3.0x10−3 to 4.0x10−3 ohm.cm2. Auger sputter profiles of the asdeposited In/Hg0.4Cd0.6 and Sn/Hg0.4Cd0.6 interfaces have shown a significant in-diffusion of the metal overlayer. The influence of shallow In2+ implantation prior to metallization was an increase in pc which occurred above a dose of 1013 ions/cm2. In contrast, Pt and Au formed Schottky barrier diodes on n-type Hg0.4Cd0.6 with øb=0.69eV for Pt and øb=0.79eV for Au. With prior In2+ implantation, both Pt and Au contacts exhibited an ohmic behaviour with pc= 2x10−1 ohm.cm2. These results have significance in the fabrication of devices for 1.0 -2.5μm optical communications.

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Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.721 ◽

2007 ◽

Vol 556-557 ◽

pp. 721-724 ◽

Cited By ~ 7

Author(s):

Anne Elisabeth Bazin ◽

Thierry Chassagne ◽

Jean François Michaud ◽

André Leycuras ◽

Marc Portail ◽

...

Keyword(s):

Contact Resistance ◽

Transmission Line ◽

Doping Level ◽

Nitrogen Doping ◽

Ohmic Contacts ◽

Specific Contact Resistance ◽

Silicon Doping ◽

Transmission Line Model ◽

Si Substrates ◽

Specific Contact

In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.

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