Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic–inorganic hybrid heterojunction

2008 ◽  
Vol 158 (21-24) ◽  
pp. 969-972 ◽  
Author(s):  
K. Akkılıç ◽  
Y.S. Ocak ◽  
S. İlhan ◽  
T. Kılıçoğlu
Keyword(s):  
Electronic Properties ◽  
Interface Layer ◽  
Inorganic Hybrid

Electronic Properties of Organic-inorganic Hybrid Systems

2019 ◽  
Vol 6 (2) ◽  
pp. 297-303
Author(s):  
Yang Li ◽  
Ke Sun ◽  
Jianyong Yang ◽  
Mitra Dutta ◽  
Michael A. Stroscio
Keyword(s):  
Electronic Properties ◽  
Hybrid Systems ◽  
Inorganic Hybrid

Thickness Dependence of Electronic Properties of GaN Epi-layers

1996 ◽  
Vol 449 ◽  
Author(s):  
W. Götz ◽  
J. Walker ◽  
L.T. Romano ◽  
N.M. Johnson ◽  
R.J. Molnar
Keyword(s):  
Hall Effect ◽  
Electronic Properties ◽  
Deep Level ◽  
Variable Temperature ◽  
Hall Effect Measurement ◽  
Interface Layer ◽  
Hydride Vapor Phase Epitaxy ◽  
Conduction Path ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy

ABSTRACTThe electronic properties of heteroepitaxial GaN were investigated for unintentionally doped, n-type films grown by hydride vapor phase epitaxy on sapphire substrates. The GaN layers were characterized by variable temperature Hall-effect measurement, capacitance-voltage (C-V) measurements, and deep level transient spectroscopy (DLTS). The measurements were performed on as-grown, 13 μn thick films and repeated after thinning by mechanical polishing to 7 μm and 1.2 μm. The room temperature electron concentrations as determined by the Hall-effect measurements were found to increase from ∼1017 cm−3 (13 μm) to ∼1020 cm−3 (1.2 μm) with decreasing film thickness. However, the C-V and DLTS measurements revealed that the ionized, effective donor and deep level concentrations, respectively, remained unchanged in regions close to the top surface of the films. These findings are consistent with the presence of a thin, highly conductive near interface layer which acts as a parasitic, parallel conduction path. Possible sources of such a shunt near the GaN/sapphire interface include oxygen contamination from the sapphire substrate or a structurally highly defective, 300 nm thick interface layer.

scholarly journals Strained interface layer contributions to the structural and electronic properties of epitaxial V2O3 films

2021 ◽  
Vol 118 (16) ◽  
pp. 161602
Author(s):  
Hamidreza Hajihoseini ◽  
Einar B. Thorsteinsson ◽  
Vilborg V. Sigurjonsdottir ◽  
Unnar B. Arnalds
Keyword(s):  
Electronic Properties ◽  
Interface Layer ◽  
Structural And Electronic Properties

Effects of organic inorganic hybrid perovskite materials on the electronic properties and morphology of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and the photovoltaic performance of planar perovskite solar cells

2015 ◽  
Vol 3 (31) ◽  
pp. 15897-15904 ◽  
Author(s):  
Yijie Xia ◽  
Kuan Sun ◽  
Jingjing Chang ◽  
Jianyong Ouyang
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Perovskite Layer ◽  
Inorganic Hybrid ◽  
Perovskite Materials ◽  
Hybrid Perovskite

The deposition of a perovskite layer from its precursor solution can saliently enhance the conductivity of PEDOT:PSS.

scholarly journals The Impact of Dipolar Layers on the Electronic Properties of Organic/Inorganic Hybrid Interfaces

2019 ◽  
Vol 6 (14) ◽  
pp. 1900581 ◽  
Author(s):  
Egbert Zojer ◽  
Thomas C. Taucher ◽  
Oliver T. Hofmann
Keyword(s):  
Electronic Properties ◽  
Inorganic Hybrid ◽  
The Impact

scholarly journals Tuning Optical and Electronic Properties in Low-Toxicity Organic–Inorganic Hybrid (CH3NH3)3Bi2I9 under High Pressure

2019 ◽  
Vol 10 (8) ◽  
pp. 1676-1683 ◽  
Author(s):  
Long Zhang ◽  
Chunming Liu ◽  
Yu Lin ◽  
Kai Wang ◽  
Feng Ke ◽  
...  
Keyword(s):  
High Pressure ◽  
Electronic Properties ◽  
Inorganic Hybrid ◽  
Optical And Electronic Properties ◽  
Low Toxicity
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