scholarly journals Strong Edge Stress in Molecularly Thin Organic–Inorganic Hybrid Ruddlesden–Popper Perovskites and Modulations of Their Edge Electronic Properties

ACS Nano ◽  
2022 ◽  
Author(s):  
Devesh R. Kripalani ◽  
Yongqing Cai ◽  
Jun Lou ◽  
Kun Zhou
Keyword(s):  
Electronic Properties ◽  
Inorganic Hybrid ◽  
Edge Stress

Electronic Properties of Organic-inorganic Hybrid Systems

2019 ◽  
Vol 6 (2) ◽  
pp. 297-303
Author(s):  
Yang Li ◽  
Ke Sun ◽  
Jianyong Yang ◽  
Mitra Dutta ◽  
Michael A. Stroscio
Keyword(s):  
Electronic Properties ◽  
Hybrid Systems ◽  
Inorganic Hybrid

Effects of organic inorganic hybrid perovskite materials on the electronic properties and morphology of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) and the photovoltaic performance of planar perovskite solar cells

2015 ◽  
Vol 3 (31) ◽  
pp. 15897-15904 ◽  
Author(s):  
Yijie Xia ◽  
Kuan Sun ◽  
Jingjing Chang ◽  
Jianyong Ouyang
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Perovskite Layer ◽  
Inorganic Hybrid ◽  
Perovskite Materials ◽  
Hybrid Perovskite

The deposition of a perovskite layer from its precursor solution can saliently enhance the conductivity of PEDOT:PSS.

scholarly journals The Impact of Dipolar Layers on the Electronic Properties of Organic/Inorganic Hybrid Interfaces

2019 ◽  
Vol 6 (14) ◽  
pp. 1900581 ◽  
Author(s):  
Egbert Zojer ◽  
Thomas C. Taucher ◽  
Oliver T. Hofmann
Keyword(s):  
Electronic Properties ◽  
Inorganic Hybrid ◽  
The Impact

scholarly journals Tuning Optical and Electronic Properties in Low-Toxicity Organic–Inorganic Hybrid (CH3NH3)3Bi2I9 under High Pressure

2019 ◽  
Vol 10 (8) ◽  
pp. 1676-1683 ◽  
Author(s):  
Long Zhang ◽  
Chunming Liu ◽  
Yu Lin ◽  
Kai Wang ◽  
Feng Ke ◽  
...  
Keyword(s):  
High Pressure ◽  
Electronic Properties ◽  
Inorganic Hybrid ◽  
Optical And Electronic Properties ◽  
Low Toxicity

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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