Density functional theory study of initial stage of HfO2 atomic layer deposition on hydroxylated SiO2 surface

2007 ◽  
Vol 803 (1-3) ◽  
pp. 23-28 ◽  
Author(s):  
Jie Ren ◽  
Ya-Tong Zhang ◽  
David Wei Zhang
2005 ◽  
Vol 479 (1-2) ◽  
pp. 73-76 ◽  
Author(s):  
Wei Chen ◽  
David Wei Zhang ◽  
Jie Ren ◽  
Hong-Liang Lu ◽  
Jian-Yun Zhang ◽  
...  

2018 ◽  
Vol 20 (24) ◽  
pp. 16861-16875 ◽  
Author(s):  
M. Shirazi ◽  
W. M. M. Kessels ◽  
A. A. Bol

In this study, we investigate the reactions involving Atomic Layer Deposition (ALD) of 2D-MoS2 from the heteroleptic precursor Mo(NMe2)2(NtBu)2 and H2S as the co-reagent on a SiO2(0001) surface by means of density functional theory (DFT).


2011 ◽  
Vol 675-677 ◽  
pp. 1249-1252
Author(s):  
Jie Ren ◽  
Guang Fen Zhou

The competitive reactions in atomic layer deposition (ALD) of HfO2, ZrO2 and Al2O3 on the hydroxylated Si(100) surfaces are investigated by using density functional theory. The surface reactions in ALD of HfO2 and ZrO2 show large similarities in energetics and geometrical structures. However, both of them show discrepancies with the surface reactions in ALD of Al2O3. In addition, by comparing with the self-termination reactions, we could find that the further growth reactions are both kinetically and thermodynamically more favorable in ALD of HfO2, ZrO2 and Al2O3.


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