Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering

2005 ◽  
Vol 475 (1-2) ◽  
pp. 354-358 ◽  
Author(s):  
S.H. Jeong ◽  
I.S. Bae ◽  
Y.S. Shin ◽  
S.-B. Lee ◽  
H.-T. Kwak ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Gate Dielectric ◽  
Rf Magnetron Sputtering ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Gate Dielectric

Two-step interfacial reaction of HfO2 high-k gate dielectric thin films on Si

2004 ◽  
Vol 30 (7) ◽  
pp. 1267-1270 ◽  
Author(s):  
P.F. Lee ◽  
J.Y. Dai ◽  
H.L.W. Chan ◽  
C.L. Choy
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Gate Dielectric ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Gate Dielectric

Study of Hf—Al—O High-k Gate Dielectric Thin Films Grown on Si

2003 ◽  
Vol 57 (1) ◽  
pp. 1213-1219 ◽  
Author(s):  
P. F. Lee ◽  
J. Y. Dai ◽  
H. L. W. Chan ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gate Dielectric ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Gate Dielectric
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