Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

2005 ◽  
Vol 483 (1-2) ◽  
pp. 158-163 ◽  
Author(s):  
Z.M. Zhao ◽  
O. Hul'ko ◽  
H.J. Kim ◽  
J. Liu ◽  
B. Shi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Growth Temperature ◽  
Inas Quantum Dots

Growth Temperature Dependence of Size Distribution of Selfassembled Inas Quantum Dots on Gaas(001): From Diffusion- to Strain-Limited Growth

1999 ◽  
Vol 583 ◽  
Author(s):  
J. Yuan ◽  
G. D. Lian ◽  
Z. Y. Li ◽  
D. A. Ritchie ◽  
R. M. Thompson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Growth Temperature ◽  
High Growth ◽  
Misfit Strain ◽  
Diffusion Limited Aggregation ◽  
Mbe Growth ◽  
Inas Quantum Dots ◽  
Transmission Electron ◽  
Geometric Size

AbstractWe have investigated the molecular beam epitaxy (MBE) growth of buried InAs quantum dots on GaAs (001) surface, as a function of deposition temperature, by transmission electron microscopy (TEM) and photoluminescence (PL). We found that the dot growth at low temperature is controlled by diffusion-limited aggregation. As the growth temperature increases, this growth mode is modified by misfit strain, resulting in a narrowing of the size distribution. However, we did not find any evidence for a thermodynamically optimized size. In addition, we found that the optical properties of the quantum dots does not correlate directly with the geometric size of the quantum dots, indicating a complex internal structure for quantum dots grown at high growth temperature.

Size distribution effects on self-assembled InAs quantum dots

2007 ◽  
Vol 18 (S1) ◽  
pp. 191-194 ◽  
Author(s):  
S. I. Jung ◽  
H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
I. K. Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled

Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1245-L1248 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Kunihiko Yujobo ◽  
Toshiyuki Kaizu
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Narrow Size Distribution ◽  
Inas Quantum Dots

Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

2000 ◽  
Vol 62 (11) ◽  
pp. 7213-7218 ◽  
Author(s):  
H. Kissel ◽  
U. Müller ◽  
C. Walther ◽  
W. T. Masselink ◽  
Yu. I. Mazur ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

2017 ◽  
Vol 32 (5) ◽  
pp. 055013 ◽  
Author(s):  
H Xie ◽  
R Prioli ◽  
G Torelly ◽  
H Liu ◽  
A M Fischer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Luminescence Properties ◽  
Inas Quantum Dots

Effects of growth temperature of partial GaAs cap on InAs quantum dots in In-flush process for single dot spectroscopy

2011 ◽  
Vol 8 (2) ◽  
pp. 248-250 ◽  
Author(s):  
Naoto Kumagai ◽  
Shunsuke Ohkouchi ◽  
Masayuki Shirane ◽  
Yuichi Igarashi ◽  
Masahiro Nomura ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Growth Temperature ◽  
Inas Quantum Dots

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

Three-Modal Size Distribution of Self-assembled InAs Quantum Dots

2005 ◽  
Vol 44 (4A) ◽  
pp. 2037-2040 ◽  
Author(s):  
Chang-Myung Lee ◽  
Suk-Ho Choi ◽  
Sam-Kyu Noh ◽  
Joo In Lee ◽  
Jin-Soo Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Size Distribution ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Modal Size

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S. Sengupta ◽  
S.Y. Shah ◽  
N. Halder ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Emission Line ◽  
Size Distribution ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Narrow Linewidth ◽  
Inas Quantum Dots ◽  
Monolayer Coverage ◽  
Narrow Emission

AbstractEpitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

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