Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

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Three-Modal Size Distribution of Self-assembled InAs Quantum Dots

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.2037 ◽

2005 ◽

Vol 44 (4A) ◽

pp. 2037-2040 ◽

Cited By ~ 4

Author(s):

Chang-Myung Lee ◽

Suk-Ho Choi ◽

Sam-Kyu Noh ◽

Joo In Lee ◽

Jin-Soo Kim ◽

...

Keyword(s):

Quantum Dots ◽

Size Distribution ◽

Inas Quantum Dots ◽

Self Assembled ◽

Modal Size

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Does The 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots?

MRS Proceedings ◽

10.1557/proc-417-199 ◽

1995 ◽

Vol 417 ◽

Cited By ~ 1

Author(s):

J.-L. Lazzari ◽

R. Klann ◽

A. Mazuelas ◽

A. Trampert ◽

M. Wassermeier ◽

...

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Effective Mass ◽

Strain State ◽

Narrow Range ◽

Narrow Size Distribution ◽

Structural And Optical Properties ◽

Photoluminescence Band ◽

Inas Quantum Dots ◽

Striking Contrast

AbstractWe study the growth of InAs/AlxGa1-xAs/GaAs heterostructures as well as their structural and optical properties. Structurally coherent InAs islands with a narrow size distribution are found to be formed only in a very narrow range of InAs coverage. In striking contrast, the photoluminescence band in the 1.15–1.35 eV spectral range, which is commonly attributed to the emission from InAs quantum dots, is present for all of our structures, regardless the presence or absence of InAs islands and their strain state. Moreover, for constant InAs coverage this PL band follows not the Γ gap but the L gap of the AlxGa1-xAs barrier. This latter result is in disagreement with effective mass calculations for three-dimensionally confined excitons.

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Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

Thin Solid Films ◽

10.1016/j.tsf.2005.01.003 ◽

2005 ◽

Vol 483 (1-2) ◽

pp. 158-163 ◽

Cited By ~ 10

Author(s):

Z.M. Zhao ◽

O. Hul'ko ◽

H.J. Kim ◽

J. Liu ◽

B. Shi ◽

...

Keyword(s):

Quantum Dots ◽

Size Distribution ◽

Growth Temperature ◽

Inas Quantum Dots

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Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

Opto-Electronics Review ◽

10.2478/s11772-010-1039-2 ◽

2010 ◽

Vol 18 (3) ◽

Cited By ~ 6

Author(s):

S. Sengupta ◽

S.Y. Shah ◽

N. Halder ◽

S. Chakrabarti

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Emission Line ◽

Size Distribution ◽

Single Layer ◽

Quantum Dot Lasers ◽

Narrow Linewidth ◽

Inas Quantum Dots ◽

Monolayer Coverage ◽

Narrow Emission

AbstractEpitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

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