Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 255-259
Author(s):  
M.A.H. Khalafalla ◽  
Z.A.K. Durrani ◽  
H. Mizuta ◽  
H. Ahmed ◽  
S. Oda
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Coupling Effects

scholarly journals Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
A. F. Qasrawi ◽  
Salam M. Kmail ◽  
Samah F. Assaf ◽  
Z. M. Saleh
Keyword(s):  
Short Circuit ◽  
Point Contact ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Very High Frequency ◽  
Self Energy ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
Schottky Device

Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit (Isc) current and open circuit voltage (Voc) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a Voc of 229 mV with an Isc of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest Isc being 9.0 mA/cm2 and the Voc of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.

scholarly journals Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures

2006 ◽  
Vol 6 (3) ◽  
pp. 536-540 ◽  
Author(s):  
M.A.H. Khalafalla ◽  
H. Mizuta ◽  
S. Oda ◽  
Z.A.K. Durrani
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Contact Structures ◽  
Interdot Coupling ◽  
Coupling Phenomena

Scattering and coupling effects of electromagnetic waves in 3D networks of spheres

1998 ◽  
Vol 1 (1) ◽  
pp. 45-52 ◽  
Author(s):  
M. Defos du Rau ◽  
F. Pessan ◽  
G. Ruffie ◽  
V. Vignéras-Lefebvre ◽  
J. P. Parneix
Keyword(s):  
Electromagnetic Waves ◽  
Coupling Effects ◽  
3D Networks

Point-contact spectroscopy of quasi-1D conductors with CDW

1999 ◽  
Vol 09 (PR10) ◽  
pp. Pr10-179-Pr10-181
Author(s):  
A. A. Sinchenko ◽  
Yu. I. Latyshev ◽  
S. G. Zybtsev ◽  
I. G. Gorllova
Keyword(s):  
Point Contact ◽  
Point Contact Spectroscopy

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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