Possible Non-equilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor

2006 ◽  
Author(s):  
M. A. H. Khalafalla ◽  
H. Mizuta ◽  
S. Oda ◽  
Z. A. K. Durrani
Keyword(s):  
Kondo Effect ◽  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Non Equilibrium

scholarly journals Predicting the conductance of strongly correlated molecules: the Kondo effect in perchlorotriphenylmethyl/Au junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17738-17750 ◽  
Author(s):  
W. H. Appelt ◽  
A. Droghetti ◽  
L. Chioncel ◽  
M. M. Radonjić ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Perturbation Theory ◽  
First Principles ◽  
Density Functional ◽  
Kondo Effect ◽  
Strongly Correlated ◽  
Functional Theory ◽  
Molecular Conductance ◽  
Non Equilibrium

We predict the non-equilibrium molecular conductance in the Kondo regime from first principles by combining density functional theory with the renormalized super-perturbation theory.

scholarly journals Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni) and M/nc-Si:H/M Multifunctional Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-7
Author(s):  
A. F. Qasrawi ◽  
Salam M. Kmail ◽  
Samah F. Assaf ◽  
Z. M. Saleh
Keyword(s):  
Short Circuit ◽  
Point Contact ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Very High Frequency ◽  
Self Energy ◽  
Silicon Thin Films ◽  
Vapor Deposition Technique ◽  
Schottky Device

Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit (Isc) current and open circuit voltage (Voc) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a Voc of 229 mV with an Isc of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest Isc being 9.0 mA/cm2 and the Voc of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.

scholarly journals Relation between the 0.7 anomaly and the Kondo effect: Geometric crossover between a quantum point contact and a Kondo quantum dot

2015 ◽  
Vol 92 (19) ◽  
Author(s):  
Jan Heyder ◽  
Florian Bauer ◽  
Enrico Schubert ◽  
David Borowsky ◽  
Dieter Schuh ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Kondo Effect ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Quantum Point ◽  
0.7 Anomaly ◽  
Geometric Crossover

Non-equilibrium electronic processes in nanocrystalline silicon

2003 ◽  
Author(s):  
M. L. Ciurea ◽  
V. Iancu ◽  
M. Draghici ◽  
L. Jdira
Keyword(s):  
Nanocrystalline Silicon ◽  
Non Equilibrium

scholarly journals Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors

2003 ◽  
Vol 2 (4) ◽  
pp. 271-276 ◽  
Author(s):  
M.A.H. Khalafalla ◽  
H. Mizuta ◽  
Z.A. Khan Durrani
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Single Electron

scholarly journals From tunneling to contact in a magnetic atom: The non-equilibrium Kondo effect

2017 ◽  
Vol 146 (9) ◽  
pp. 092309 ◽  
Author(s):  
Deung-Jang Choi ◽  
Paula Abufager ◽  
Laurent Limot ◽  
Nicolás Lorente
Keyword(s):  
Kondo Effect ◽  
Magnetic Atom ◽  
Non Equilibrium

Non-equilibrium Kondo Effect in Electronic Transport through Quantum Dots

2004 ◽  
Vol 54 (S4) ◽  
pp. 615-618 ◽  
Author(s):  
R. Świrkowicz ◽  
M. Wilczyński ◽  
J. Barnaś
Keyword(s):  
Quantum Dots ◽  
Electronic Transport ◽  
Kondo Effect ◽  
Non Equilibrium

scholarly journals Three-body correlations in nonlinear response of correlated quantum liquid

2020 ◽  
Author(s):  
Tokuro Hata ◽  
Yoshimichi Teratani ◽  
Tomonori Arakawa ◽  
Sanghyun Lee ◽  
Meydi Ferrier ◽  
...  
Keyword(s):  
Kondo Effect ◽  
Unitary Limit ◽  
Quantum Liquid ◽  
Perfect Agreement ◽  
Fluctuation Dissipation ◽  
Kondo Systems ◽  
Ring Exchange ◽  
Many Body Systems ◽  
Three Body ◽  
Non Equilibrium

Abstract Understanding the properties of correlated quantum liquids is a fundamental issue of condensed matter physics. Even in such a correlated case, fascinatingly, we can tell that the equilibrium fluctuations of the system govern its linear response to an external field, relying on the fluctuation dissipation relations based on the two-body correlations. Going beyond, up to the three-body correlations, is of importance for van der Waals force [1], the three-body force in nuclei [2], the Efimov state [3, 4], the ring exchange interaction in solid 3He [5, 6], and frustrated spin systems [7]. In our work, we have used a quantum dot in the Kondo regime, which is a controllable realization of such a correlated quantum liquid [8–11]. Thanks to the quality of our sample, where the Kondo effect in the unitary limit was achieved, we could quantitatively measure the three-body correlations and their role in the non-equilibrium regime, in perfect agreement with recent results of the Fermi liquid theory [12– 15]. In particular, we have demonstrated its importance when time-reversal symmetry is broken, solving a long-standing puzzle of the Kondo systems under the magnetic field [13]. The demonstrated method to relate three-body correlation and non-equilibrium transport opens up a way for further investigation of the dynamics of quantum many-body systems.

scholarly journals Quantum Transport Through a ``Charge" Kondo Circuit: Effects of Weak Repulsive Interaction in Luttinger Liquid

2020 ◽  
Vol 30 (1) ◽  
pp. 1
Author(s):  
Thanh Thi Kim Nguyen ◽  
Mikhail N. Kiselev
Keyword(s):  
Quantum Transport ◽  
Coulomb Blockade ◽  
Quantum Interference ◽  
Kondo Effect ◽  
Single Channel ◽  
Point Contact ◽  
Luttinger Liquid ◽  
Single Mode ◽  
Quantum Circuit ◽  
Repulsive Interaction

We investigate theoretically quantum transport through the ``charge" Kondo circuit consisting of the quantum dot (QD) coupled weakly to an electrode at temperature \(T+\Delta T\) and connected strongly to another electrode at the reference temperature \(T\) by a single-mode quantum point contact (QPC). To account for the effects of Coulomb interaction in the QD-QPC setup operating in the integer quantum Hall regime we describe the edge current in the quantum circuit by Luttinger model characterized by the Luttinger parameter \(g\). It is shown that the temperature dependence of both electric conductance \(G\propto T^{2/g}\) and thermoelectric coefficient \(G_T\propto T^{1+2/g}\) detours from the Fermi-liquid (FL) theory predictions. The behaviour of the thermoelectric power \(S=G_T/G\propto T\) in a regime of a single-channel Kondo effect is, by contrast, consistent with the FL paradigm. We demonstrate that the interplay between the mesoscopic Coulomb blockade in QD and weak repulsive interaction in the Luttinger Liquid \(g=1-\alpha\) \((\alpha \ll 1)\) results in the enhancement of the thermopower. This enhancement is attributed to suppression of the Kondo correlations in the ``charge" circuit by the destructive quantum interference effects.

Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 255-259
Author(s):  
M.A.H. Khalafalla ◽  
Z.A.K. Durrani ◽  
H. Mizuta ◽  
H. Ahmed ◽  
S. Oda
Keyword(s):  
Point Contact ◽  
Nanocrystalline Silicon ◽  
Coupling Effects
Sign in / Sign up

Export Citation Format

Share Document