Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD) on stainless steel (SST) substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni) and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit (Isc) current and open circuit voltage (Voc) of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a Voc of 229 mV with an Isc of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest Isc being 9.0 mA/cm2 and the Voc of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.
Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors
