Properties of Zn1−xCoxO thin films grown on silicon substrates prepared by pulsed laser deposition

Epitaxial thin films of PbZr0.52Ti0.48O3 (PZT) were synthesized successfully on SrRuO3/SrTiO3/MgO/TiN/Si heterostructures by pulsed laser deposition. The films were single phase and had (001) orientation. The deposition parameters were varied to obtain the best epitaxial layer for each of the compounds. Transmission electron microscopy indicated good epitaxy for the entire heterostructure and sharp interfaces between the epilayers. Dielectric and P–E hysteresis loop measurements were carried out with evaporated Ag electrodes. The dielectric constant for the films was found to be between 400–450. The value of saturation polarization Ps was between 55–60 μC/cm2, and the coercive field Ec varied from 60–70 kV/cm. Integration of PZT films with silicon will be useful for future memory and micromechanical devices.

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Pulsed laser deposition of lanthanum monosulfide thin films on silicon substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1856477 ◽

2005 ◽

Vol 23 (1) ◽

pp. 318 ◽

Cited By ~ 15

Author(s):

S. Fairchild ◽

J. Jones ◽

M. Cahay ◽

K. Garre ◽

P. Draviam ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Silicon Substrates ◽

Lanthanum Monosulfide

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High piezoelectric performance of lead-free BiFeO3–BaTiO3 thin films grown by a pulsed laser deposition method

RSC Advances ◽

10.1039/c6ra22271d ◽

2016 ◽

Vol 6 (108) ◽

pp. 106899-106903 ◽

Cited By ~ 3

Author(s):

Jinsu Park ◽

Myang Hwan Lee ◽

Da Jeong Kim ◽

Myong-Ho Kim ◽

Won-Jeong Kim ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Lead Free ◽

Silicon Substrates ◽

Deposition Method ◽

Piezoelectric Thin Films ◽

Piezoelectric Performance

Lead-free (100 − x)BiFeO3–xBaTiO3 (BFBTx, x = 0, 30, 33, 40 and 50) piezoelectric thin films were deposited on platinized silicon substrates by using a pulsed laser deposition method.

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Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011110 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-65-Pr11-69

Author(s):

N. Lemée ◽

H. Bouyanfif ◽

J. L. Dellis ◽

M. El Marssi ◽

M. G. Karkut ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20011121 ◽

2001 ◽

Vol 11 (PR11) ◽

pp. Pr11-133-Pr11-137

Author(s):

J. R. Duclère ◽

M. Guilloux-Viry ◽

A. Perrin ◽

A. Dauscher ◽

S. Weber ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Platinum Electrodes

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Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-720-h2.4 ◽

2002 ◽

Vol 720 ◽

Author(s):

Costas G. Fountzoulas ◽

Daniel M. Potrepka ◽

Steven C. Tidrow

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Electrical Characterization ◽

Field Variable ◽

Laser Deposition ◽

X Ray Diffraction ◽

Ceramic Substrates ◽

Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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