Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

2006 ◽  
Vol 511-512 ◽  
pp. 543-547 ◽  
Author(s):  
Y. Veschetti ◽  
J.-C. Muller ◽  
J. Damon-Lacoste ◽  
P. Roca i Cabarrocas ◽  
A.S. Gudovskikh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Front Side ◽  
Heterojunction Solar Cells ◽  
Thin Silicon ◽  
P Type

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Effect of the Hetero-Interface on the Photoresponse of A-Si/C-Si Solar Cells

1994 ◽  
Vol 358 ◽  
Author(s):  
B. Jagannathan ◽  
J. Yi ◽  
R. Wallace ◽  
W. A. Anderson
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Forward Bias ◽  
Depletion Region ◽  
Defect States ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells ◽  
Wavelength Absorption ◽  
P Type

ABSTRACTHeterojunction solar cells were fabricated by glow discharge deposition of amorphous silicon on p-type crystalline silicon resulting in a n/i/p structure. Dark I-V-T data on the devices show that the conduction in the forward bias regime (<0.4 volts) for better devices agrees with a multi-tunnelling-capture-emission process. The photoresponse was evaluated (under 100 mW/cm2) for various a-Si thicknesses and substrate resistivities. Spectral response tests showed an increased low wavelength absorption as the a-Si thickness was decreased. The blue response of the devices have better fill-factors than the red response indicating defects at the interface. Further, I-V-T and C-V measurements also corroborate the presence of defect states which seem to prevent the spread of the depletion region in crystalline silicon. The photoresponse was found to be very sensitive to the interface defects and the fill-factors ranged from 0.42, for the sample in which the depletion region had spread, to 0.1 in those where the depletion region had been reduced in thickness by the interface states.

Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon

2004 ◽  
Vol 451-452 ◽  
pp. 355-360 ◽  
Author(s):  
M. Tucci ◽  
M. della Noce ◽  
E. Bobeico ◽  
F. Roca ◽  
G. de Cesare ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Heterojunction Solar Cells ◽  
P Type

scholarly journals Numerical simulation for optimization of ultra-thin n-type AZO and TiO2 based textured p-type c-Si Heterojunction Solar Cells

2021 ◽  
Author(s):  
Chandan Yadav ◽  
sushil kumar
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Simulation Software ◽  
Heterojunction Solar Cell ◽  
Maximum Efficiency ◽  
Heterojunction Solar Cells ◽  
Type Layer ◽  
P Type

Abstract A maximum efficiency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained efficiency signifying a lot of improvements can be performed to improve efficiency of TiO2/Si and AZO/Si heterojunction solar cell. AZO layer and TiO2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO2/Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum efficiency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and efficient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

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