2011 International Electron Devices Meeting
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223
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9781457705052, 9781457705069, 9781457705045
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Ultra low power: Emerging devices and their benefits for integrated circuits

2011 ◽  
Author(s):  
Adrian M. Ionescu ◽  
Luca De Michielis ◽  
Nilay Dagtekin ◽  
Giovanni Salvatore ◽  
Ji Cao ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Ultra Low Power

scholarly journals Sub-10 nm carbon nanotube transistor

2011 ◽  
Author(s):  
Aaron D. Franklin ◽  
Shu-Jen Han ◽  
George S. Tulevski ◽  
Mathieu Luisier ◽  
Chris M. Breslin ◽  
...  
Keyword(s):  
Carbon Nanotube

A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology

2011 ◽  
Author(s):  
Min Dai ◽  
Jinping Liu ◽  
Dechao Guo ◽  
Siddarth Krishnan ◽  
Joseph F. Shepard ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Cmos Technology ◽  
Metal Gate

High performance SiC trench devices with ultra-low ron

2011 ◽  
Author(s):  
T. Nakamura ◽  
Y. Nakano ◽  
M. Aketa ◽  
R. Nakamura ◽  
S. Mitani ◽  
...  
Keyword(s):  
High Performance

Quantum transport in deterministically implanted single-donors in Si FETs

2011 ◽  
Author(s):  
T. Shinada ◽  
M. Hori ◽  
F. Guagliardo ◽  
G. Ferrari ◽  
A. Komatubara ◽  
...  
Keyword(s):  
Quantum Transport

Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance

2011 ◽  
Author(s):  
Kazuhiko Endo ◽  
Shin-ichi O'uchi ◽  
Yuki Ishikawa ◽  
Yongxun Liu ◽  
Takashi Matsukawa ◽  
...  
Keyword(s):  
Correlative Analysis
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