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2011 International Electron Devices Meeting
Latest Publications
TOTAL DOCUMENTS
223
(FIVE YEARS 0)
H-INDEX
32
(FIVE YEARS 0)
Published By IEEE
9781457705052, 9781457705069, 9781457705045
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131573
◽
2011
◽
Cited By ~ 46
Author(s):
B. Gao
◽
J. F. Kang
◽
Y. S. Chen
◽
F. F. Zhang
◽
B. Chen
◽
...
Keyword(s):
Bipolar Switching
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Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131650
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2011
◽
Cited By ~ 54
Author(s):
Z. Wei
◽
T. Takagi
◽
Y. Kanzawa
◽
Y. Katoh
◽
T. Ninomiya
◽
...
Keyword(s):
High Density
◽
Reliability Model
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Ultra low power microsystems using RF energy scavenging (invited)
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131527
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2011
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Cited By ~ 1
Author(s):
Michael P. Flynn
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Ben Hyo Ghuem Rhew
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Jaehun Jeong
◽
Jeffrey A. Fredenburg
Keyword(s):
Low Power
◽
Energy Scavenging
◽
Ultra Low Power
◽
Rf Energy
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A new disturb free programming scheme in scaled NAND Flash memory
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131520
◽
2011
◽
Cited By ~ 1
Author(s):
Riichiro Shirota
◽
Chen-Hao Huang
◽
Hideki Arakawa
Keyword(s):
Flash Memory
◽
Nand Flash
◽
Nand Flash Memory
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Single-grain Si TFTs using spin-coated liquid-silicon
2011 International Electron Devices Meeting
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10.1109/iedm.2011.6131553
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2011
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Cited By ~ 4
Author(s):
Jin Zhang
◽
Ryoichi Ishihara
◽
Hideyuki Tagagishi
◽
Ryo Kawajiri
◽
Tatsuya Shimoda
◽
...
Keyword(s):
Liquid Silicon
◽
Single Grain
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Statistical characterization of current paths in narrow poly-Si channels
2011 International Electron Devices Meeting
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10.1109/iedm.2011.6131540
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2011
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Cited By ~ 16
Author(s):
R. Degraeve
◽
M. Toledano-Luque
◽
A. Suhane
◽
G. Van den bosch
◽
A Arreghini
◽
...
Keyword(s):
Statistical Characterization
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Hardware-assisted 3D TCAD for predictive capacitance extraction in 32nm SOI SRAMs
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131673
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2011
◽
Cited By ~ 3
Author(s):
A. N. Bhoj
◽
R. V. Joshi
◽
S. Polonsky
◽
R. Kanj
◽
S. Saroop
◽
...
Keyword(s):
Capacitance Extraction
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A unified 3D device simulation of random dopant, interface trap and work function fluctuations on high-к/metal gate device
2011 International Electron Devices Meeting
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10.1109/iedm.2011.6131495
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2011
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Cited By ~ 8
Author(s):
Yiming Li
◽
Hui-Wen Cheng
◽
Yung-Yueh Chiu
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Chun-Yen Yiu
◽
Hsin-Wen Su
Keyword(s):
Work Function
◽
Device Simulation
◽
Interface Trap
◽
Metal Gate
◽
Random Dopant
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Research in self-powered electronic systems
2011 International Electron Devices Meeting
◽
10.1109/iedm.2011.6131528
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2011
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Cited By ~ 2
Author(s):
Dennis Buss
Keyword(s):
Electronic Systems
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Self Powered
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Quantum transport in deterministically implanted single-donors in Si FETs
2011 International Electron Devices Meeting
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10.1109/iedm.2011.6131644
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2011
◽
Cited By ~ 7
Author(s):
T. Shinada
◽
M. Hori
◽
F. Guagliardo
◽
G. Ferrari
◽
A. Komatubara
◽
...
Keyword(s):
Quantum Transport
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