Numerical simulation for optimization of ultra-thin n-type AZO and TiO2 based textured p-type c-Si Heterojunction Solar Cells

Maximum Efficiency ◽

Type Layer ◽

P Type

Abstract A maximum efficiency of 17% for ultra-thin n-type AZO layer and 17.5% for ultra-thin n-type TiO2 layer based silicon heterojunction solar cell is reported by optimizing its properties which is much higher than practically obtained efficiency signifying a lot of improvements can be performed to improve efficiency of TiO2/Si and AZO/Si heterojunction solar cell. AZO layer and TiO2 layer is used as n-type emitter layer and crystalline silicon wafer is used as p-type (p-cSi) layer for modelling AZO/Si and TiO2/Si heterojunctions solar cell respectively using AFORS HET automat simulation software. Various parameters like thickness of AZO, TiO2 layer, p-cSi layer, doping concentration of donors (Nd) and effective conduction band density (Nc) are optimized. Finally, texturing at different angle is studied and maximum efficiency is reported at 70 µm thick p-type crystalline Silicon (p-cSi) wafer, that can be very helpful for manufacturing low cost HJ solar cells at industrial scale because of thin wafer and removal of additional processing setup required for deposition of amorphous silicon i-layer. Utilization of TiO2 and Aluminium doped Zinc Oxide as n-type layer and p-cSi as p-type layer can help in producing low cost and efficient heterojunction (HJ) than compared to HJ with intrinsic thin layer HIT solar cells.

Novel high-efficiency crystalline-silicon-based compound heterojunction solar cells: HCT (heterojunction with compound thin-layer)

Physical Chemistry Chemical Physics ◽

10.1039/c4cp00668b ◽

2014 ◽

Vol 16 (29) ◽

pp. 15400-15410 ◽

Cited By ~ 16

Author(s):

Yiming Liu ◽

Yun Sun ◽

Wei Liu ◽

Jianghong Yao

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Thin Layer ◽

High Efficiency ◽

Crystalline Silicon ◽

Silicon Based

A novel high-efficiency c-Si heterojunction solar cell with using compound hetero-materials is proposed and denominated HCT (heterojunction with a compound thin-layer).

Air-Stable MXene/GaAs Heterojunction Solar Cells with a High Initial Efficiency of 9.69%

Journal of Materials Chemistry A ◽

10.1039/d1ta04194k ◽

2021 ◽

Author(s):

Zhijie Zhang ◽

Jing Lin ◽

Peiye Sun ◽

Qinghao Zeng ◽

Xi Deng ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

High Efficiency ◽

Low Cost ◽

Two Dimensional ◽

2D Material ◽

Photovoltaic Applications ◽

Excellent Stability

Two-dimensional (2D) material-based heterojunction solar cells have attracted significant interests due to their potential in low-cost photovoltaic applications. Herein, a novel MXene/GaAs heterojunction solar cell with high-efficiency and excellent stability...

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

MRS Proceedings ◽

10.1557/opl.2015.552 ◽

2015 ◽

Vol 1770 ◽

pp. 7-12 ◽

Cited By ~ 1

Author(s):

Henriette A. Gatz ◽

Yinghuan Kuang ◽

Marcel A. Verheijen ◽

Jatin K. Rath ◽

Wilhelmus M.M. (Erwin) Kessels ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Material Properties ◽

Crystalline Silicon ◽

Silicon Layer ◽

Nanocrystalline Silicon ◽

Emitter Layer ◽

Silicon Heterojunction Solar Cells

P Type ◽

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Energies ◽

10.3390/en13184667 ◽

2020 ◽

Vol 13 (18) ◽

pp. 4667

Author(s):

Laurentiu Fara ◽

Irinela Chilibon ◽

Ørnulf Nordseth ◽

Dan Craciunescu ◽

Dan Savastru ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Reliability Analysis ◽

High Performance ◽

High Efficiency ◽

Absorber Layer ◽

Complex Investigation ◽

Conduction Band Offset

This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.

Enhancement of photovoltaic properties of CH3NH3PbBr3 heterojunction solar cells by modifying mesoporous TiO2 surfaces with carboxyl groups

Journal of Materials Chemistry A ◽

10.1039/c4ta06479h ◽

2015 ◽

Vol 3 (17) ◽

pp. 9264-9270 ◽

Cited By ~ 52

Author(s):

Hyun Bin Kim ◽

Iseul Im ◽

Yeomin Yoon ◽

Sang Do Sung ◽

Eunji Kim ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Mesoporous Tio2 ◽

Carboxyl Groups ◽

Photovoltaic Properties ◽

Light Absorber

In a novel heterojunction solar cell employing CH3NH3PbBr3 (MAPbBr3) as the light absorber, the introduction of a carboxylate monolayer on the mesoporous TiO2 surfaces significantly enhances JSC as well as VOC.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

Silicon Heterojunction Solar Cells with Cu2O:N as p-type Layer

10.1109/pvsc.2018.8548186 ◽

2018 ◽

Cited By ~ 1

Author(s):

Jinwoo Kim ◽

Yuki Takiguchi ◽

Kazuyoshi Nakada ◽

Shinsuke Miyajima

Keyword(s):

Solar Cells ◽

Silicon Heterojunction Solar Cells

Type Layer ◽

P Type ◽

Effect of the Hetero-Interface on the Photoresponse of A-Si/C-Si Solar Cells

MRS Proceedings ◽

10.1557/proc-358-939 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 1

Author(s):

B. Jagannathan ◽

J. Yi ◽

R. Wallace ◽

W. A. Anderson

Keyword(s):

Solar Cells ◽

Crystalline Silicon ◽

Spectral Response ◽

Forward Bias ◽

Depletion Region ◽

Defect States ◽

Si Solar Cells ◽

Wavelength Absorption ◽

P Type

ABSTRACTHeterojunction solar cells were fabricated by glow discharge deposition of amorphous silicon on p-type crystalline silicon resulting in a n/i/p structure. Dark I-V-T data on the devices show that the conduction in the forward bias regime (<0.4 volts) for better devices agrees with a multi-tunnelling-capture-emission process. The photoresponse was evaluated (under 100 mW/cm2) for various a-Si thicknesses and substrate resistivities. Spectral response tests showed an increased low wavelength absorption as the a-Si thickness was decreased. The blue response of the devices have better fill-factors than the red response indicating defects at the interface. Further, I-V-T and C-V measurements also corroborate the presence of defect states which seem to prevent the spread of the depletion region in crystalline silicon. The photoresponse was found to be very sensitive to the interface defects and the fill-factors ranged from 0.42, for the sample in which the depletion region had spread, to 0.1 in those where the depletion region had been reduced in thickness by the interface states.

Critical Electric Field of InGaN p-i-n Solar Cell

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.284-287.1168 ◽

2013 ◽

Vol 284-287 ◽

pp. 1168-1172

Author(s):

Der Yuh Lin ◽

Chao Yu Chi

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Field Strength ◽

Electric Field ◽

Electric Field Strength ◽

High Efficiency ◽

Physical Models ◽

Electric Field Effect ◽

Type Layer ◽

P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.