In-situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl4 and H2O system

2007 ◽  
Vol 515 (24) ◽  
pp. 8768-8770 ◽  
Author(s):  
D. Vernardou ◽  
M.E. Pemble ◽  
D.W. Sheel
2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Alexander Jones ◽  
Kissan Mistry ◽  
Manfred Kao ◽  
Ahmed Shahin ◽  
Mustafa Yavuz ◽  
...  

AbstractA technique is presented for collecting data on both the spatial and temporal variations in the electrical properties of a film as it is deposited on a flexible substrate. A flexible printed circuit board substrate with parallel electrodes distributed across its surface was designed. Zinc oxide films were then deposited on the flexible substrate at different temperatures via atmospheric pressure chemical vapour deposition (AP-CVD) using a spatial atomic layer deposition system. AP-CVD is a promising high-throughput thin film deposition technique with applications in flexible electronics. Collecting data on the film properties in-situ allows us to directly observe how deposition conditions affect the evolution of those properties in real-time. The spatial uniformity of the growing film was monitored, and the various stages of film nucleation and growth on the polymer substrate were observed. The measured resistance of the films was observed to be very high until a critical amount of material has been deposited, consistent with Volmer–Weber growth. Furthermore, monitoring the film resistance during post-deposition cooling enabled immediate identification of metallic or semiconducting behaviour within the conductive ZnO films. This technique allows for a more complete understanding of metal chalcogen film growth and properties, and the high volume of data generated will be useful for future implementations of machine-learning directed materials science.


2006 ◽  
Vol 2006 (6) ◽  
pp. 1255-1259 ◽  
Author(s):  
Nicolas D. Boscher ◽  
Claire J. Carmalt ◽  
Ivan P. Parkin

2005 ◽  
Vol 19 (5) ◽  
pp. 644-657 ◽  
Author(s):  
Joanne E. Stanley ◽  
Anthony C. Swain ◽  
Kieran C. Molloy ◽  
David W. H. Rankin ◽  
Heather E. Robertson ◽  
...  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.


2009 ◽  
Vol 517 (10) ◽  
pp. 3061-3065 ◽  
Author(s):  
D.W. Sheel ◽  
H.M. Yates ◽  
P. Evans ◽  
U. Dagkaldiran ◽  
A. Gordijn ◽  
...  

1998 ◽  
Vol 264-268 ◽  
pp. 227-230 ◽  
Author(s):  
Gabriel Ferro ◽  
H. Vincent ◽  
Yves Monteil ◽  
Didier Chaussende ◽  
J. Bouix

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