Grain size, texture, and crystallinity in lanthanum monosulfide thin films grown by pulsed laser deposition

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.

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Effect of grain size on the electrical properties of (Pb0.72La0.28)Ti0.93O3 thin films grown by pulsed laser deposition

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(02)00112-9 ◽

2002 ◽

Vol 5 (2-3) ◽

pp. 249-252 ◽

Cited By ~ 4

Author(s):

Kyoung Bo Han ◽

Chang Hoon Jeon ◽

Hee Sauk Jhon ◽

Sang Yeol Lee

Keyword(s):

Thin Films ◽

Grain Size ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition

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Novel Nanocrystalline Materials by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-617-j2.4 ◽

2000 ◽

Vol 617 ◽

Cited By ~ 3

Author(s):

J. Narayan ◽

A.K. Sharma ◽

A. Kvit ◽

D. Kumar ◽

J.F. Muth

Keyword(s):

Thin Films ◽

Grain Size ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Grain Boundary Sliding ◽

Laser Deposition ◽

Nanocrystalline Metal ◽

Potential Applications ◽

Novel Method ◽

Boundary Sliding

AbstractWe have developed a novel method based upon pulsed laser deposition to produce nanocrystalline metal, semiconductor and magnetic material thin films and composites. The size of nanocrystals was controlled by interfacial energy, number of monolayers and substrate temperature. By incorporating a few monolayers of W during PLD, the grain size of copper nanocrystals was reduced from 160nm (Cu on Si (100)) to 4nm for a multilayer (Cu/W/Cu/W/Si (100)) thin film. The hardness increased with decreasing grain size up to a certain value (7nm in the case of copper) and then decreased below this value. While the former is consistent with Hall-Petch model, the latter involves a new model based upon grain boundary sliding.We have used the same PLD approach to form nanocrystalline metal (Ni, Co, Fe embedded in α-A12O3 and MgO) and semiconductor (Si, Ge, ZnO, GaN embedded in AIN and α-A12O3) thin films. These nanocrystalline composites exhibit novel magnetic properties and novel optoelectronic properties with quantum confinement of electrons, holes and excitons in semiconductors. We review advanced PLD processing, detailed characterization, structureproperty correlations and potential applications of these materials.

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The Effect of Y2O3 on Properties of Hydroxyapatite Thin Films Prepared by Pulsed Laser Deposition

Journal of Biomimetics Biomaterials and Biomedical Engineering ◽

10.4028/www.scientific.net/jbbbe.29.22 ◽

2016 ◽

Vol 29 ◽

pp. 22-32 ◽

Cited By ~ 2

Author(s):

Quan He Bao ◽

Jie Qing Zhang

Keyword(s):

Thin Films ◽

Grain Size ◽

Pulsed Laser Deposition ◽

Body Fluid ◽

Pulsed Laser ◽

Laser Deposition ◽

Simulate Body Fluid ◽

Original Films ◽

Precipitated Phases

HA and HA+Y2O3 films were prepared by pulsed laser deposition. The microstructure and composition of films were studied by EPMA, XRD, AFM and SEM. In vitro study was performed by immersing the sample in simulate body fluid (SBF) in different days. There are more droplets on films prepared by HA+Y2O3 target than that of HA. And addition of Y2O3 can decrease the size of crystal grains. The XRD results show that the peaks corresponding to HA slightly shift to lower angel which indicates the HA lattice distorting due to addition of Y2O3. The critical load of the films increases from 10.3N to 13N when Y2O3 added. The film prepared by target HA+Y2O3 shows a higher resistance to dissolution and the precipitated grain size is small. New precipitated phases have similar functional groups with the original films.

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