Novel Nanocrystalline Materials by Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
J. Narayan ◽  
A.K. Sharma ◽  
A. Kvit ◽  
D. Kumar ◽  
J.F. Muth
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Grain Boundary Sliding ◽  
Laser Deposition ◽  
Nanocrystalline Metal ◽  
Potential Applications ◽  
Novel Method ◽  
Boundary Sliding

AbstractWe have developed a novel method based upon pulsed laser deposition to produce nanocrystalline metal, semiconductor and magnetic material thin films and composites. The size of nanocrystals was controlled by interfacial energy, number of monolayers and substrate temperature. By incorporating a few monolayers of W during PLD, the grain size of copper nanocrystals was reduced from 160nm (Cu on Si (100)) to 4nm for a multilayer (Cu/W/Cu/W/Si (100)) thin film. The hardness increased with decreasing grain size up to a certain value (7nm in the case of copper) and then decreased below this value. While the former is consistent with Hall-Petch model, the latter involves a new model based upon grain boundary sliding.We have used the same PLD approach to form nanocrystalline metal (Ni, Co, Fe embedded in α-A12O3 and MgO) and semiconductor (Si, Ge, ZnO, GaN embedded in AIN and α-A12O3) thin films. These nanocrystalline composites exhibit novel magnetic properties and novel optoelectronic properties with quantum confinement of electrons, holes and excitons in semiconductors. We review advanced PLD processing, detailed characterization, structureproperty correlations and potential applications of these materials.

Growth of Textured Nanocrystalline Cobalt Ferrite Thin Films by Pulsed Laser Deposition

2008 ◽  
Vol 8 (8) ◽  
pp. 4135-4140 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
A. Srivastava ◽  
S. K. Sahoo ◽  
P. Das ◽  
C. Mukherjee ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Pulsed Laser Deposition ◽  
Cobalt Ferrite ◽  
Pulsed Laser ◽  
Grazing Incidence ◽  
Orientation Distribution ◽  
Laser Deposition ◽  
X Ray ◽  
Ferrite Thin Films

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.

Grain size, texture, and crystallinity in lanthanum monosulfide thin films grown by pulsed laser deposition

2012 ◽  
Vol 524 ◽  
pp. 166-172 ◽  
Author(s):  
S. Fairchild ◽  
M. Cahay ◽  
P.T. Murray ◽  
L. Grazulis ◽  
X. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lanthanum Monosulfide

Structural, Mechanical and Tribological Properties of TiN and CrN Films Deposited by Reactive Pulsed Laser Deposition

2004 ◽  
Vol 843 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mechanical And Tribological Properties ◽  
Potential Applications

ABSTRACTNitride thin films have potential applications in different areas of silicon device technology, namely as diffusion barrier in metallization schemes, rectifying and ohmic contacts, and gate electrodes in field effect transistors. In the present investigation, TiN and CrN films have been deposited by reactive pulsed laser deposition technique using Ti and Cr targets at 10mTorr background pressure of N2. Si (100) and AISI 440C steel substrates were used for the present study. Films were deposited at different temperatures in the range of 200°C to 600°C. The deposited films exhibited densely packed grain, with smooth and uniform structures. X-ray Photoelectron Spectroscopy (XPS) analysis of the films showed and 50% Ti and 40% of N in TiN films, 45% of Cr and 45% of N in CrN films deposited on Si (111), with the balance mostly oxygen, indicating near stoichiometric composition of the deposited nitride thin films. Hardness of the films changed from 22 GPa at 200°C to 30 GPa at 600°C for TiN, whereas for CrN we obtained 26 GPa at 200°C to 31 GPa at 600°C. The residual stress in the films showed a change from compressive stress at 200°C to tensile stress at 600°C in both the cases. Friction coefficient of the films were measured by pin-on-disk technique for all films, up to the tested limit of 10, 000 cycles at 1 N load and found to be very high (≥ 1) in both cases.

The Effect of Y2O3 on Properties of Hydroxyapatite Thin Films Prepared by Pulsed Laser Deposition

2016 ◽  
Vol 29 ◽  
pp. 22-32 ◽  
Author(s):  
Quan He Bao ◽  
Jie Qing Zhang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Pulsed Laser Deposition ◽  
Body Fluid ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Simulate Body Fluid ◽  
Original Films ◽  
Precipitated Phases

HA and HA+Y2O3 films were prepared by pulsed laser deposition. The microstructure and composition of films were studied by EPMA, XRD, AFM and SEM. In vitro study was performed by immersing the sample in simulate body fluid (SBF) in different days. There are more droplets on films prepared by HA+Y2O3 target than that of HA. And addition of Y2O3 can decrease the size of crystal grains. The XRD results show that the peaks corresponding to HA slightly shift to lower angel which indicates the HA lattice distorting due to addition of Y2O3. The critical load of the films increases from 10.3N to 13N when Y2O3 added. The film prepared by target HA+Y2O3 shows a higher resistance to dissolution and the precipitated grain size is small. New precipitated phases have similar functional groups with the original films.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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