Atomic layer deposition of Al2O3 and Al2O3/TiO2 barrier coatings to reduce the water vapour permeability of polyetheretherketone

2015 ◽  
Vol 591 ◽  
pp. 131-136 ◽  
Author(s):  
Tamkin Ahmadzada ◽  
David R. McKenzie ◽  
Natalie L. James ◽  
Yongbai Yin ◽  
Qing Li
Keyword(s):  
Atomic Layer Deposition ◽  
Water Vapour ◽  
Atomic Layer ◽  
Water Vapour Permeability ◽  
Vapour Permeability ◽  
Barrier Coatings ◽  
Layer Deposition

scholarly journals Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

2014 ◽  
Vol 570 ◽  
pp. 101-106 ◽  
Author(s):  
Mohamed Elrawemi ◽  
Liam Blunt ◽  
Leigh Fleming ◽  
David Bird ◽  
David Robbins ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Vapour ◽  
Atomic Layer ◽  
Water Vapour Permeability ◽  
Vapour Permeability ◽  
Layer Deposition

Thin Al2O3 barrier coatings onto temperature-sensitive packaging materials by atomic layer deposition

2011 ◽  
Vol 205 (21-22) ◽  
pp. 5088-5092 ◽  
Author(s):  
Terhi Hirvikorpi ◽  
Mika Vähä-Nissi ◽  
Juha Nikkola ◽  
Ali Harlin ◽  
Maarit Karppinen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Temperature Sensitive ◽  
Packaging Materials ◽  
Barrier Coatings ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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