Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition

2016 ◽  
Vol 602 ◽  
pp. 13-19 ◽  
Author(s):  
J.M. Hartmann ◽  
V. Benevent ◽  
V. Reboud ◽  
A. Chelnokov ◽  
K. Guilloy ◽  
...  
1992 ◽  
Vol 70 (10-11) ◽  
pp. 946-948
Author(s):  
S. B. Hewitt ◽  
S.-P. Tay ◽  
N. G. Tarr ◽  
A. R. Boothroyd

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.


2008 ◽  
Vol 154-155 ◽  
pp. 76-84 ◽  
Author(s):  
J.M. Hartmann ◽  
F. Andrieu ◽  
D. Lafond ◽  
T. Ernst ◽  
Y. Bogumilowicz ◽  
...  

2003 ◽  
Vol 18 (4) ◽  
pp. 352-360 ◽  
Author(s):  
V Loup ◽  
J M Hartmann ◽  
G Rolland ◽  
P Holliger ◽  
F Laugier ◽  
...  

2015 ◽  
Vol 30 (11) ◽  
pp. 114009 ◽  
Author(s):  
John E Halpin ◽  
Stephen D Rhead ◽  
Ana M Sanchez ◽  
Maksym Myronov ◽  
David R Leadley

2010 ◽  
Vol 8 (3) ◽  
pp. 952-955 ◽  
Author(s):  
M. Myronov ◽  
V. A. Shah ◽  
A. Dobbie ◽  
Xue-Chao Liu ◽  
Van H. Nguyen ◽  
...  

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