Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition
2008 ◽
Vol 154-155
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pp. 76-84
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2003 ◽
Vol 18
(4)
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pp. 352-360
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2011 ◽
Vol 44
(5)
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pp. 055102
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2015 ◽
Vol 30
(11)
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pp. 114009
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2016 ◽
Vol 445
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pp. 65-72
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