Crystallization behavior of electron-beam-evaporated amorphous silicon films on textured glass substrates by flash lamp annealing

2021 ◽  
Vol 728 ◽  
pp. 138681
Author(s):  
Aimi Yago ◽  
Keisuke Ohdaira
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Crystallization Behavior ◽  
Silicon Films ◽  
Flash Lamp ◽  
Glass Substrates

Flash lamp crystallization of amorphous silicon films on glass substrates

1984 ◽  
Vol 117 (2) ◽  
pp. 117-123 ◽  
Author(s):  
B. Loisel ◽  
B. Guenais ◽  
A. Poudoulec ◽  
P. Henoc
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Flash Lamp ◽  
Glass Substrates

Thermal and Stress Modeling for the Flash Lamp Crystallization of Amorphous Silicon Films

2006 ◽  
Vol 910 ◽  
Author(s):  
Mark Smith ◽  
Richard A. McMahon ◽  
Keith A. Seffen ◽  
Dieter Panknin ◽  
Matthias Voelskow ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Loading ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Low Cost ◽  
Substrate Material ◽  
Silicon Films ◽  
Flash Lamp ◽  
Process Conditions ◽  
Glass Substrates

AbstractThin poly-crystalline silicon films are attractive for the fabrication of active matrix liquid crystal displays. We investigate the use of flash lamp annealing to crystallize amorphous silicon layers on glass substrates as a low cost manufacturing route. In this process amorphous silicon (a-Si) can be crystallized by solid phase crystallization (SPC) or in the super lateral growth (SLG) regime. We present a thermal model incorporating the phase transitions during annealing; providing a valuable tool for optimizing the process conditions. Another consideration is the evolution of stress resulting from the transient thermal loading of the substrate material. Results are presented for various substrate geometries and important scalability issues are addressed.

Crystallization of amorphous silicon films via electron beam exposure

2015 ◽  
Vol 16 (3) ◽  
pp. 169-174
Author(s):  
Byeong-Yeon Moon ◽  
Jung Su Kang ◽  
Seon Yong Park ◽  
Kyu Chang Park
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Silicon Films

Variation of crystallization mechanisms in flash-lamp-irradiated amorphous silicon films

2010 ◽  
Vol 312 (19) ◽  
pp. 2834-2839 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Takuya Nishikawa ◽  
Hideki Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Flash Lamp

Diffusion of TEM grid material into amorphous silicon films

1990 ◽  
Vol 48 (4) ◽  
pp. 660-661
Author(s):  
S. Kritzinger ◽  
J.C. Lombaard ◽  
C.J. Bedeker
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Silicide Formation ◽  
Release Agent ◽  
Formation Reaction ◽  
Glass Substrates ◽  
Nucleation Sites ◽  
Amorphous Si ◽  
Tem Grid

While investigating the silicide formation reaction between thin bilayers of amorphous Si (a-Si) and Cr, an unintended interaction occurred between the specimens and the supporting TEM grids. In an attempt to understand this phenomenon, the interaction between a single film of a-Si and TEM grids made of Cu, Ni, Au and Mo were investigated by in situannealing in a Siemens Elmiskop 101. The 60 nm films, prepared by e-beam evaporation of pure Si onto glass substrates, covered with an acetone-soluble release agent, were amorphous.In Fig. 1 the interaction between the a-Si film and a Cu TEM grid is shown. Areas I, II, III and IV in (a) show different stages of the interaction, area IV being closest to the Cu grid bar, and area I being pure a-Si. The reaction started at about 600°C by crystallisation of the a-Si film at different spots in contact with the grid bars, and fanned out from these nucleation sites (area II).

Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass

1999 ◽  
Vol 587 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Hiroshi Tanabe ◽  
Claudine M. Chen ◽  
Harry A. Atwater ◽  
Emanuele Rimini
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Tem Analysis ◽  
Glass Substrates

AbstractWe investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since use of glass substrates constrains process temperatures, our approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crystallization of an initially amorphous silicon film, at lithographically predetermined sites, enables grain sizes larger than those observed via random crystallization. Selective heterogeneous nucleation centers were created on undoped, 75 nm thick, amorphous silicon films, by masked implantation of Ni islands, followed by annealing at temperatures below 600 °. At this temperature, the Ni precipitates into NiSi2 particles that catalyze the transition from the amorphous to the crystalline Si phase. Seeded crystallization begins at the metal islands and continues via lateral solid phase epitaxy (SPE), thus obtaining crystallized regions of several tens of square microns in one hour. We have studied the dependence of the crystallization rate on the Ni-implanted dose in the seed, in the 5×1015/cm3 - 1016/cm3range. The large grained polycrystalline Si films were then used as a substrate for molecular beam epitaxy (MBE) depositions of 1 [.proportional]m thick Si layers. Transmission electron microscopy (TEM) analysis showed a strong correlation between the substrate morphology and the deposited layer. The layer presented a large grain morphology, with sizes of about 4 [.proportional]m.

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