Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates

2007 ◽  
Vol 46 (12) ◽  
pp. 7603-7606 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Yohei Endo ◽  
Tomoko Fujiwara ◽  
Shogo Nishizaki ◽  
Hideki Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Flash Lamp ◽  
Glass Substrates ◽  
Polycrystalline Silicon Films ◽  
Highly Uniform

Structure Control of Polycrystalline Silicon Films on Glass Substrates and Their Properties

1999 ◽  
Vol 169-170 ◽  
pp. 171-174
Author(s):  
Toshio Kamiya ◽  
Kouichi Nakahata ◽  
Kazuyoshi Ro ◽  
J. Tohti ◽  
Charles M. Fortmann ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Structure Control ◽  
Glass Substrates ◽  
Polycrystalline Silicon Films

Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

2011 ◽  
Vol 519 (14) ◽  
pp. 4459-4461 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Naohito Tomura ◽  
Shohei Ishii ◽  
Hideki Matsumura
Keyword(s):  
Hydrogen Concentration ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Flash Lamp ◽  
High Hydrogen ◽  
Si Films ◽  
Polycrystalline Silicon Films

Flash lamp crystallization of amorphous silicon films on glass substrates

1984 ◽  
Vol 117 (2) ◽  
pp. 117-123 ◽  
Author(s):  
B. Loisel ◽  
B. Guenais ◽  
A. Poudoulec ◽  
P. Henoc
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Flash Lamp ◽  
Glass Substrates

Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon

2009 ◽  
Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Amorphous Film ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Rapid Formation ◽  
Polycrystalline Silicon Films

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.

Electronic Properties and Device Applications of Hot-Wire CVD Polycrystalline Silicon Films

1997 ◽  
Vol 467 ◽  
Author(s):  
A. R. Middya ◽  
J. Guillet ◽  
R. Brenot ◽  
J. Perrin ◽  
J. E. Bouree ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Broad Band ◽  
Silicon Films ◽  
Crystallographic Structure ◽  
Hydrogen Treatment ◽  
Textured Surface ◽  
Hot Wire ◽  
Glass Substrates ◽  
Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films (5 to 30 μm thick) have been deposited on glass substrates at low temperatures (400–550 °C) with a rate of 15 Å/s by hot-wire chemical vapour deposition (HWCVD). The homogeneity of the deposited layer is ±5% on a 8 cm diameter substrate. The films have columnar microstructure and a textured surface. The undoped films (carrier concentration, 1011 cm−3) have a resistivity of 105-106 Ω-cm, activation energy of 0.50 ± 0.05 eV and Hall mobility of 14 ± 4 cm2 /V.s. By in situ gas phase doping, resistivity can be varied by six to seven orders of magnitude. Incorporation of dopant atoms such as boron into the film, strongly influences its morphological and crystallographic structure. The mobility lifetime product of undoped films is low (10−8 cm2/V), possibly due to the presence of a high density of dangling bonds defects and broad band-tails. This product can be improved by a factor of 5 to 10 by using in-situ hydrogen passivation in the same reactor at lower temperature (350–400 °C) within one hour. The results of many complementary experiments suggest that hydrogen treatment mainly improves carrier mobility by a factor of 3 to 4 by passivating extended defects. Preliminary results on application of these types of materials in unoptimized P-I-N solar cells on c-Si and glass substrates are presented.

Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass

1999 ◽  
Vol 587 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Hiroshi Tanabe ◽  
Claudine M. Chen ◽  
Harry A. Atwater ◽  
Emanuele Rimini
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Silicon Films ◽  
Solid Phase Epitaxy ◽  
Tem Analysis ◽  
Glass Substrates

AbstractWe investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells. Since use of glass substrates constrains process temperatures, our approach to form large-grain polycrystalline silicon templates is selective nucleation and solid phase epitaxy (SNSPE). In this process, selective crystallization of an initially amorphous silicon film, at lithographically predetermined sites, enables grain sizes larger than those observed via random crystallization. Selective heterogeneous nucleation centers were created on undoped, 75 nm thick, amorphous silicon films, by masked implantation of Ni islands, followed by annealing at temperatures below 600 °. At this temperature, the Ni precipitates into NiSi2 particles that catalyze the transition from the amorphous to the crystalline Si phase. Seeded crystallization begins at the metal islands and continues via lateral solid phase epitaxy (SPE), thus obtaining crystallized regions of several tens of square microns in one hour. We have studied the dependence of the crystallization rate on the Ni-implanted dose in the seed, in the 5×1015/cm3 - 1016/cm3range. The large grained polycrystalline Si films were then used as a substrate for molecular beam epitaxy (MBE) depositions of 1 [.proportional]m thick Si layers. Transmission electron microscopy (TEM) analysis showed a strong correlation between the substrate morphology and the deposited layer. The layer presented a large grain morphology, with sizes of about 4 [.proportional]m.

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