The effect of surface strain relaxation on HAADF imaging

2009 ◽  
Vol 109 (12) ◽  
pp. 1453-1464 ◽  
Author(s):  
V. Grillo
Keyword(s):  
Strain Relaxation ◽  
Surface Strain ◽  
Effect Of Surface

Probing the Effect of Surface Strain on CO Binding to Pd Thin Films

2019 ◽  
Vol 123 (19) ◽  
pp. 12255-12260
Author(s):  
Dan J. Harding ◽  
Marian David Bongers ◽  
Stefan Wagner ◽  
Hinrich Hahn ◽  
Jannis Neugebohren ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Strain ◽  
Effect Of Surface

Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy

2001 ◽  
Vol 696 ◽  
Author(s):  
A.R. Woll ◽  
P. Moran ◽  
E.M. Rehder ◽  
B. Yang ◽  
T.F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Relaxation ◽  
Surface Cleaning ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Surface Strain ◽  
Energy Electron ◽  
High Temperature Annealing ◽  
Low Energy Electron ◽  
Dislocation Multiplication

AbstractWe demonstrate the use of low-energy electron microscopy (LEEM) as a tool for studying dis-location formation in low-Ge-content SiGe films on Si(001) and silicon-on-insulator. Compared to TEM, sample preparation for LEEM consists only of conventional surface cleaning. Yet, because of its sensitivity to local variations in surface strain on Si(001), LEEM can detect dislocations at the earliest stages of strain relaxation. In identically prepared SiGe films, the typical dislocation extends over the entire viewable region of several hundred microns in SiGe/Si, but is less than 100 microns in SiGe/SOI. In addition, dislocation cross-slip and threading segments are common in SiGe/SOI, but virtually non-existent in SiGe/Si. We have also observed dislocation formation in real-time during high temperature annealing. Preliminary results appear to demonstrate dislocation multiplication and blocking at a perpendicular glide plane. The applicability of LEEM to strain relaxation in other Si-based systems will be discussed.

Origin of the Stability of Ge(105) on Si: A New Structure Model and Surface Strain Relaxation

2002 ◽  
Vol 88 (17) ◽  
Author(s):  
Y. Fujikawa ◽  
K. Akiyama ◽  
T. Nagao ◽  
T. Sakurai ◽  
M. G. Lagally ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Surface Strain ◽  
Structure Model ◽  
The Stability

The effect of surface strain on the CO-poisoned surface of Pt electrode for hydrogen adsorption

2017 ◽  
Vol 350 ◽  
pp. 212-217 ◽  
Author(s):  
Jia He ◽  
Yongli Shen ◽  
Mingzhu Yang ◽  
Haixia Zhang ◽  
Qibo Deng ◽  
...  
Keyword(s):  
Hydrogen Adsorption ◽  
Surface Strain ◽  
Pt Electrode ◽  
Effect Of Surface

Effect of surface normal variability on local surface strain measurements in StereoDIC

2021 ◽  
Vol 138 ◽  
pp. 106373
Author(s):  
Farzana Yasmeen ◽  
Michael A. Sutton ◽  
Sreehari Rajan ◽  
Hubert Schreier ◽  
Andrew Campbell
Keyword(s):  
Surface Strain ◽  
Local Surface ◽  
Strain Measurements ◽  
Surface Normal ◽  
Normal Variability ◽  
Effect Of Surface

Progression of Strain Relaxation in Linearly-Graded GaAs1-yPy/GaAs (001) Epitaxial Layers Approximated by a Finite Number of Sublayers

2017 ◽  
Vol 26 (03) ◽  
pp. 1740007
Author(s):  
Tedi Kujofsa ◽  
John E. Ayers
Keyword(s):  
Finite Number ◽  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Current Source ◽  
Electric Circuit ◽  
Surface Strain ◽  
Buffer Layers ◽  
Equilibrium Analysis ◽  
Voltage Source ◽  
Free Zone

We have investigated the residual in-plane strain and width of the surface misfit dislocation free zone in linearly-graded GaAs1-yPy metamorphic buffer layers as approximated by a finite number of sublayers. For this purpose we have developed an electric circuit model approach for the equilibrium analysis of these structures, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. Utilizing this new approach, we show that the residual surface strain in linearly-graded epitaxial structures increases monotonically with grading coefficient as well as the number of sublayers, and is strongly dependent on the width of the misfit dislocation free zone, which diminishes with an increasing grading coefficient.

Epitaxial growth of CaO films on MgO(001) surface: Strain relaxation at the CaO∕MgO heterointerface

2007 ◽  
Vol 102 (4) ◽  
pp. 046103 ◽  
Author(s):  
H. D. Li ◽  
X. N. Zhang ◽  
Z. Zhang ◽  
Z. X. Mei ◽  
X. L. Du ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Strain Relaxation ◽  
Surface Strain

Effects of surface stress relaxation on reflection electron microscopy images of normal emerging edge dislocations

1987 ◽  
Vol 45 ◽  
pp. 36-37
Author(s):  
L.-M. Peng ◽  
J.M. Cowley ◽  
Tung Hsu
Keyword(s):  
Stress Relaxation ◽  
Strain Relaxation ◽  
Reciprocal Lattice ◽  
Incident Beam ◽  
Surface Strain ◽  
Surface Relaxation ◽  
Additional Stress ◽  
Contrast Effects ◽  
Reflection Electron Microscopy ◽  
Edge Dislocations

It has been well established that, due to the termination of the bulk periodic potential at the surface, the forces acting on the surface atoms are no longer symmetrical but the surface atoms are displaced from their ideal lattice positions. Similarly, additional surface relaxation due to the loss of periodicity is expected to occur at the points where some kinds of bulk defects, like dislocations, intersect the surface. There are experimental indications that the rather more pronounced contrast observed in TEM at these intersection points may be contributed to by the additional stress relaxation.The REM technique is sensitive to crystal orientation and provides an ideal method of detecting the surface strain relaxation. The diffraction contrast effects arise from the changes of the angle between the incident beam and the local surface reciprocal lattice resulting from the strain field on the surface.

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