Deposition of thin tungsten carbide films by dual ion beam sputtering deposition

Vacuum ◽  
2018 ◽  
Vol 157 ◽  
pp. 45-50 ◽  
Author(s):  
Fei Zhu ◽  
Zhi-lei Chen ◽  
Ke-zhao Liu ◽  
Wei Liang ◽  
Zhengjun Zhang
Keyword(s):  
Tungsten Carbide ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Effects of Nitrogen on Formation and Properties of Diamondlike Films Synthesized by Dual Ion Beam Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
Xiaoming He ◽  
Hongwei Song ◽  
Wenzhi Li ◽  
Fuzhai Cui ◽  
Hengde Li ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Diamondlike Carbon ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Beam Deposition

ABSTRACTDiamondlike carbon-nitrogen films on silicon (111) wafer and tungsten carbide plates have been prepared by using dual ion beam sputtering deposition and simultaneous bombardment by N+ with energies of 100-800 eV at room temperature. These films retain their diamondlike characteristics. However, as the nitrogen content increases from 10% at to 20% at., the Auger electron spectroscopy spectra of films change obviously in fine structure and the main Cls peak of carbon atoms in the X-ray photoelectron spectroscopy spectra shifts to 285.65 eV. The maximum hardness of these films on tungsten carbide plates is about 5260 kg/mm2. The films have an amorphous structure and smooth surface. The state of nitrogen in films and its influence on the structure and properties of films are discussed.

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Dual ion-beam sputtering deposition of palladium-fluoropolymer nano-composites

2005 ◽  
Vol 80 (4) ◽  
pp. 791-795 ◽  
Author(s):  
I. Farella ◽  
A. Valentini ◽  
N. Cioffi ◽  
L. Torsi
Keyword(s):  
Ion Beam ◽  
Nano Composites ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Investigation on the DLC films prepared by dual-ion beam sputtering deposition

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1058
Author(s):  
Wang Tianmin ◽  
Wang WeiJie ◽  
Liu Guiang ◽  
Huang Liangpu ◽  
Luo Chuntai ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Investigation on the DLC films prepared by dual-ion-beam-sputtering deposition

1991 ◽  
Author(s):  
Tianmin Wang ◽  
Weijie Wang ◽  
Guidng Liu ◽  
Liangpu Huang ◽  
Chuntai Luo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Influence of Metal Electrode(Ag,Au,Pt) on the Dielectric and Electrical Properties of HfTaO Capacitors

2011 ◽  
Vol 197-198 ◽  
pp. 1757-1765
Author(s):  
Tao Yu ◽  
Xue Mei Wu ◽  
Lan Jian Zhuge
Keyword(s):  
Leakage Current ◽  
Ion Beam ◽  
Metal Electrode ◽  
Flat Band ◽  
Ion Beam Sputtering ◽  
Pt Electrode ◽  
Mos Capacitors ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

HfTaO-based MOS capacitors with different top electrode (Ag、Au、Pt) were successfully fabricated by dual ion beam sputtering deposition (DIBSD). We presented the effect of different metal gate on the capacity, flat band voltage shift, leakage current and conduction mechanism. It has been found that the Pt-electrode capacitor exhibited the highest accumulation capacitance. In addition, the largest hysteresis loop in Pt/HfTaO/Si capacitor during the forward-and-reverse voltage sweeping from +2.5V to -2.5V was observed. The result indicates the presence of a large amount of fixed charges or oxygen vacancies exist in interface Pt/HfTaO, which is consistent with the prediction from Qf results. It is proved that even though Eotof the Pt-electrode capacitor is lower than that of the Ag, Au-electroded, and that of leakage current still has the smallest value at a high electric field due to Pt with a high enough work function Φms(Pt)=5.65eV.

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