MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers

2001 ◽  
Vol 223 (3) ◽  
pp. 341-348 ◽  
Author(s):  
A. Wilk ◽  
F. Genty ◽  
B. Fraisse ◽  
G. Boissier ◽  
P. Grech ◽  
...  
1997 ◽  
Vol 484 ◽  
Author(s):  
M. J. Yang ◽  
W. J. Moore ◽  
B. R. Bennett ◽  
B. V. Shanabrook ◽  
J. O. Cross

AbstractThe MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.


2010 ◽  
Vol 49 (14) ◽  
pp. 2606 ◽  
Author(s):  
Steven T. Yang ◽  
Manyalibo J. Matthews ◽  
Selim Elhadj ◽  
Diane Cooke ◽  
Gabriel M. Guss ◽  
...  

Author(s):  
Richard F. Haglund ◽  
Nicole L. Dygert ◽  
Stephen L. Johnson ◽  
Kenneth E. Schriver ◽  
Hee K. Park

Author(s):  
J. A. Gupta ◽  
P. J. Barrios ◽  
A. Bezinger ◽  
P. Waldron ◽  
B. F. Ventrudo ◽  
...  

Author(s):  
Mikhail P. Frolov ◽  
Yuri V. Korostelin ◽  
Vladimir I. Kozlovsky ◽  
Stanislav O. Leonov ◽  
Peter Fjodorow ◽  
...  

Author(s):  
Anthony D. DiChiara ◽  
Shambhu Ghmire ◽  
David A. Reis ◽  
Louis F. DiMauro ◽  
Pierre Agostini

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