Preparation of superconducting epitaxial thin films of transition metal nitrides on silicon wafers by molecular beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 2050-2054 ◽  
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Hiroshi Okamoto ◽  
Shoji Yamanaka
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...  

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Author(s):  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
Matthew T. Hardy ◽  
Brian P. Downey ◽  
David F. Storm ◽  
...  

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Author(s):  
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ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.


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