Epitaxial thin films of MgO on Si using metalorganic molecular beam epitaxy

2000 ◽  
Vol 18 (4) ◽  
pp. 2146 ◽  
Author(s):  
F. Niu ◽  
B. H. Hoerman ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6170-6173 ◽  
Author(s):  
Min-Ho Kim ◽  
Sung-Nam Lee ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

2000 ◽  
Vol 619 ◽  
Author(s):  
F. Niu ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Amorphous Layer ◽  
Film Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Epitaxial Relationship ◽  
Transmission Electron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTEpitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy

Photoluminescence characterization of Zn1−xMgxO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

2007 ◽  
Vol 90 (12) ◽  
pp. 124104 ◽  
Author(s):  
H. Shibata ◽  
H. Tampo ◽  
K. Matsubara ◽  
A. Yamada ◽  
K. Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

1993 ◽  
Vol 63 (9) ◽  
pp. 1270-1272 ◽  
Author(s):  
J. S. Foord ◽  
T. J. Whitaker ◽  
E. N. Downing ◽  
D. O’Hare ◽  
A. C. Jones
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, Ptga and PtGa2 on Gallium Arsenide

1989 ◽  
Vol 148 ◽  
Author(s):  
Young K. Kim ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
Kang L. Wang
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Intermetallic Compounds ◽  
Phase Stability ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
Thermodynamic Phase

ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

2001 ◽  
Vol 222 (4) ◽  
pp. 701-705 ◽  
Author(s):  
J. Aderhold ◽  
V.Yu. Davydov ◽  
F. Fedler ◽  
H. Klausing ◽  
D. Mistele ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Highly Conductive Nb-Doped BaTiO 3 Epitaxial Thin Films Grown by Laser Molecular Beam Epitaxy

2001 ◽  
Vol 18 (11) ◽  
pp. 1513-1515 ◽  
Author(s):  
Yan Lei ◽  
Lü Hui-Bin ◽  
Chen Zheng-Hao ◽  
Dai Shou-Yu ◽  
Tan Guo-Tai ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy

Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

2015 ◽  
Vol 3 (8) ◽  
pp. 1830-1834 ◽  
Author(s):  
Daoyou Guo ◽  
Zhenping Wu ◽  
Yuehua An ◽  
Xiaojiang Li ◽  
Xuncai Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy ◽  
Mn Doped

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

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