The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth

1997 ◽  
Vol 173 (3-4) ◽  
pp. 367-379 ◽  
Author(s):  
Tei-Chen Chen ◽  
Hsiang-Chi Wu ◽  
Cheng-I Weng
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Bulk Single Crystal ◽  
Czochralski Growth ◽  
Interface Shape

Thermal stress analysis of silicon bulk single crystal during Czochralski growth

1992 ◽  
Vol 125 (1-2) ◽  
pp. 102-111 ◽  
Author(s):  
N. Miyazaki ◽  
H. Uchida ◽  
T. Munakata ◽  
K. Fujioka ◽  
Y. Sugino
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Stress Analysis ◽  
Bulk Single Crystal ◽  
Czochralski Growth ◽  
Thermal Stress Analysis ◽  
Silicon Bulk

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

Analysis to Reduce Thermal Stress in Oxide Single Crystal During Czochralski Growth

2004 ◽  
Author(s):  
Shigeki Hirasawa ◽  
Hiroyuki Ishibashi ◽  
Kazuhisa Kurashige ◽  
Akihiro Gunji
Keyword(s):  
Heat Transfer ◽  
Thermal Stress ◽  
Temperature Distribution ◽  
Thermal Radiation ◽  
Single Crystal ◽  
Radiation Heat Transfer ◽  
Heat Transfer Analysis ◽  
Czochralski Growth ◽  
Radiation Heat ◽  
Radial Temperature

Temperature distributions and thermal stress distributions in a semi-transparent GSO crystal during Czochralski (CZ) single crystal growth were numerically investigated by thermal radiation heat transfer analysis and anisotropy stress analysis. As GSO has special optical properties, such as semi-transparency at a wavelength shorter than 4.5 μm, thermal radiation heat transfer was calculated by the Monte Carlo method. These calculations showed that thermal stress is caused by the radial temperature distribution on the outside of the upper part of the crystal. To reduce this temperature distribution, the following three manufacturing conditions were found to be effective: use a sharp taper angle of the crystal, install a lid to the top of the insulator, and install a ring around the tapered part of the crystal.

scholarly journals Thermal Stress Analysis of Silicon Single Crystal during Czochralski Growth.

1992 ◽  
Vol 58 (554) ◽  
pp. 1953-1959
Author(s):  
Noriyuki MIYAZAKI ◽  
Hitoshi UCHIDA ◽  
Tsuyoshi MUNAKATA ◽  
Kazumasa FUJIOKA ◽  
Yuji SUGINO
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Stress Analysis ◽  
Silicon Single Crystal ◽  
Czochralski Growth ◽  
Thermal Stress Analysis

scholarly journals Analysis to Reduce Thermal Stress in Oxide-Single-Crystal during Czochralski Growth

2005 ◽  
Vol 71 (708) ◽  
pp. 2206-2209
Author(s):  
Shigeki HIRASAWA ◽  
Hiroyuki ISHIBASHI ◽  
Kazuhisa KURASHIGE ◽  
Akihiro GUNJI
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Czochralski Growth

Thermal stress analysis of GSO bulk single crystal

1997 ◽  
Vol 182 (1-2) ◽  
pp. 73-80 ◽  
Author(s):  
N. Miyazaki ◽  
T. Tamura ◽  
K. Kurashige ◽  
H. Ishibashi ◽  
K. Susa
Keyword(s):  
Thermal Stress ◽  
Single Crystal ◽  
Stress Analysis ◽  
Bulk Single Crystal ◽  
Thermal Stress Analysis
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