Vertically Integrated System with Microfabricated 3D Sensors and CO2 Microchannel Cooling

The growing demand for miniaturized radiation-tolerant detection systems with fast responses and high-power budgets has increased the necessity for smart and efficient cooling solutions. Several groups have been successfully implementing silicon microfabrication to process superficial microchannels to circulate coolants, in particular, in high-energy physics experiments, where the combination of low material budget to reduce noise generated by multiple scattering events and high radiation fluences is required. In this study, we report tests performed on an 885-µm–thick vertically integrated system. The system consists of a layer of microfabricated silicon channels for temperature management integrated to radiation-tolerant microfabricated 3D sensors, with electrodes penetrating perpendicularly to the silicon bulk, bump-bonded to an ATLAS FE-I4 pixel readout chip of 100 µm thickness, 2 × 2 cm2, and 26,880 pixels (each measuring 250 × 50 μm2). The system’s electrical and temperature characterization under CO2 cooling as well as the response to minimum ionizing particles from radioactive sources and particle beams before and after 2.8 ×1015 neq cm−2 proton irradiation will be discussed.

High speed silicon wet anisotropic etching for applications in bulk micromachining: a review

Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications in the field of microelectromechanical systems (MEMS). In addition, it is most widely used for surface texturing to minimize the reflectance of light to improve the efficiency of crystalline silicon solar cells. In wet bulk micromachining, the etch rate is a major factor that affects the throughput. Slower etch rate increases the fabrication time and therefore is of great concern in MEMS industry where wet anisotropic etching is employed to perform the silicon bulk micromachining, especially to fabricate deep cavities and freestanding microstructures by removal of underneath material through undercutting process. Several methods have been proposed to increase the etch rate of silicon in wet anisotropic etchants either by physical means (e.g. agitation, microwave irradiation) or chemically by incorporation of additives. The ultrasonic agitation during etching and microwave irradiation on the etchants increase the etch rate. However, ultrasonic method may rupture the fragile structures and microwave irradiation causes irradiation damage to the structures. Another method is to increase the etching temperature towards the boiling point of the etchant. The etching characteristics of pure potassium hydroxide solution (KOH) is studied near the boiling point of KOH, while surfactant added tetramethylammonium hydroxide (TMAH) is investigated at higher temperature to increase the etch rate. Both these studies have shown a potential way of increasing the etch rate by elevating the temperature of the etchants to its boiling point, which is a function of concentration of etch solution. The effect of various kinds of additives on the etch rate of silicon is investigated in TMAH and KOH. In this paper, the additives which improve the etch rate have been discussed. Recently the effect of hydroxylamine (NH2OH) on the etching characteristics of TMAH and KOH is investigated in detail. The concentration of NH2OH in TMAH/KOH is varied to optimize the etchant composition to obtain improved etching characteristics especially the etch rate and undercutting which are important parameters for increasing throughput. In this article, different methods explored to improve the etch rate of silicon have been discussed so that the researchers/scientists/engineers can get the details of these methods in a single reference.

Optimization of a Low-Power Chemoresistive Gas Sensor: Predictive Thermal Modelling and Mechanical Failure Analysis

The substrate plays a key role in chemoresistive gas sensors. It acts as mechanical support for the sensing material, hosts the heating element and, also, aids the sensing material in signal transduction. In recent years, a significant improvement in the substrate production process has been achieved, thanks to the advances in micro- and nanofabrication for micro-electro-mechanical system (MEMS) technologies. In addition, the use of innovative materials and smaller low-power consumption silicon microheaters led to the development of high-performance gas sensors. Various heater layouts were investigated to optimize the temperature distribution on the membrane, and a suspended membrane configuration was exploited to avoid heat loss by conduction through the silicon bulk. However, there is a lack of comprehensive studies focused on predictive models for the optimization of the thermal and mechanical properties of a microheater. In this work, three microheater layouts in three membrane sizes were developed using the microfabrication process. The performance of these devices was evaluated to predict their thermal and mechanical behaviors by using both experimental and theoretical approaches. Finally, a statistical method was employed to cross-correlate the thermal predictive model and the mechanical failure analysis, aiming at microheater design optimization for gas-sensing applications.

Silicon 3D Microdetectors for Microdosimetry in Hadron Therapy

The present overview describes the evolution of new microdosimeters developed in the National Microelectronics Center in Spain (IMB-CNM, CSIC), ranging from the first ultra-thin 3D diodes (U3DTHINs) to the advanced 3D-cylindrical microdetectors, which have been developed over the last 10 years. In this work, we summarize the design, main manufacture processes, and electrical characterization of these devices. These sensors were specifically customized for use in particle therapy and overcame some of the technological challenges in this domain, namely the low noise capability, well-defined sensitive volume, high spatial resolution, and pile-up robustness. Likewise, both architectures reduce the loss of charge carriers due to trapping effects, the charge collection time, and the voltage required for full depletion compared to planar silicon detectors. In particular, a 3D‒cylindrical architecture with electrodes inserted into the silicon bulk and with a very well‒delimited sensitive volume (SV) mimicked a cell array with shapes and sizes similar to those of mammalian cells for the first time. Experimental tests of the carbon beamlines at the Grand Accélérateur National d’Lourds (GANIL, France) and Centro Nazionale Adroterapia Oncologica (CNAO, Italy) showed the feasibility of the U3DTHINs in hadron therapy beams and the good performance of the 3D‒cylindrical microdetectors for assessing linear energy distributions of clinical beams, with clinical fluence rates of 5 × 107 s−1cm−2 without saturation. The dose-averaged lineal energies showed a generally good agreement with Monte Carlo simulations. The results indicated that these devices can be used to characterize the microdosimetric properties in hadron therapy, even though the charge collection efficiency (CCE) and electronic noise may pose limitations on their performance, which is studied and discussed herein. In the last 3D‒cylindrical microdetector generation, we considerably improved the CCE due to the microfabrication enhancements, which have led to shallower and steeper dopant profiles. We also summarize the successive microdosimetric characterizations performed with both devices in proton and carbon beamlines.

Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor

As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., SixCy, are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer SixCy may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

Novel High-Resolution Lateral Dual-Axis Quad-Beam Optical MEMS Accelerometer Using Waveguide Bragg Gratings

A novel lateral dual-axis a-Si/SiO2 waveguide Bragg grating based quad-beam accelerometer with high-resolution and large linear range has been presented in this paper. The sensor consists of silicon bulk micromachined proof mass suspended by silica beams. Three ridge gratings are positioned on the suspending beam and proof mass to maximize sensitivity and reduce noise. Impact of external acceleration in the sensing direction on the Bragg wavelength of gratings and MEMS structure has been modelled including the effects of strain, stress and temperature variation. Acceleration induces stress in the beam thus modifying the grating period and introducing chirp. The differential wavelength shift with respect to reference grating on the proof mass is the measure of acceleration. To compensate for the effect of the weight of the proof mass and increase the sensitivity of the sensor, electrostatic force of repulsion is applied to the proof mass. For the chosen parameters, the designed sensor has a linear response over a large range and a sensitivity of 30 pm/g. The temperature of surroundings, which acts as noise in sensor performance is compensated by taking differential wavelength shift with respect to reference grating. By design and choice of material, low cross-axis sensitivity is achieved. The proposed design enables a high-resolution well below 1 μ g/ Hz and is suitable for inertial navigation and seismometry applications.

Leakage Current in P-N Junction Diode by Influent from SRFE Process

This paper present the effect from soft radiation flash exposure (SRFE) on electrical properties of semiconductor device. SRFE process take only few second on semiconductor device but it quite impact to device performance. The part we will study impact from SRFE such as surface and bulk. COMSOL is tool for help to understand more detail in term of surface recombination, temperature and bulk effect. Surface of device get impact from radiation and temperature generate from radiation. Also, silicon bulk get damage from radiation due to has high penetrate. From electrical results show that leakage current of device has reduce after SRFE process, mean radiation can help to improve or recover damage from fabrication process.