Effect of initial layers for high-quality GaN growth by hot-wall epitaxy

1998 ◽  
Vol 189-190 ◽  
pp. 250-253 ◽  
Author(s):  
G.N Jeon ◽  
H.S Kang ◽  
K.W Chae ◽  
W.K Jung ◽  
D.I Yang ◽  
...  
Keyword(s):  
High Quality ◽  
Initial Layers ◽  
Hot Wall Epitaxy

Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

1997 ◽  
Vol 180 (1) ◽  
pp. 47-53 ◽  
Author(s):  
Sungun Nam ◽  
Jongkwang Rhee ◽  
Byungsung O ◽  
Ki-Seon Lee ◽  
Yong Dae Choi ◽  
...  
Keyword(s):  
High Quality ◽  
Hot Wall Epitaxy

High-Quality InGaN Films Grown by Hot-Wall Epitaxy with Mixed (Ga+In) Source

1999 ◽  
Vol 38 (Part 2, No. 4B) ◽  
pp. L427-L429 ◽  
Author(s):  
Shucheng Chu ◽  
Tetsuhiro Saisho ◽  
Kazuo Fujimura ◽  
Shingo Sakakibara ◽  
Fumiyasu Tanoue ◽  
...  
Keyword(s):  
High Quality ◽  
Hot Wall Epitaxy

High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy

1986 ◽  
Vol 48 (19) ◽  
pp. 1276-1278 ◽  
Author(s):  
D. Schikora ◽  
H. Sitter ◽  
J. Humenberger ◽  
K. Lischka
Keyword(s):  
High Quality ◽  
Hot Wall Epitaxy

Growth and Evaluation of High-Quality ZnTe/GaAs by Hot Wall Epitaxy

2002 ◽  
Vol 191 (1) ◽  
pp. 161-168 ◽  
Author(s):  
B.J. Kim ◽  
J.F. Wang ◽  
Y. Ishikawa ◽  
S. Sato ◽  
M. Isshiki
Keyword(s):  
High Quality ◽  
Hot Wall Epitaxy

Fabrication of High Quality CdTe(100)/Si(100) Crystal Films by Hot Wall Epitaxy

2008 ◽  
pp. 1006-1009
Author(s):  
Tingjin Chen ◽  
Zhaohui Yao ◽  
Chaofeng Xia ◽  
Hairong Yuan ◽  
Jingtian Li ◽  
...  
Keyword(s):  
High Quality ◽  
Crystal Films ◽  
Hot Wall Epitaxy

Hot wall epitaxy of high-quality CdTe/Si(111)

2003 ◽  
Vol 256 (1-2) ◽  
pp. 20-26 ◽  
Author(s):  
Georgi M. Lalev ◽  
Jifeng Wang ◽  
Seishi Abe ◽  
Katashi Masumoto ◽  
Minoru Isshiki
Keyword(s):  
High Quality ◽  
Hot Wall Epitaxy

Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxy

1988 ◽  
Vol 86 (1-4) ◽  
pp. 377-381 ◽  
Author(s):  
H. Sitter ◽  
K. Lischka ◽  
W. Faschinger ◽  
J. Wolfrum ◽  
H. Pascher ◽  
...  
Keyword(s):  
High Quality ◽  
Gaas Substrates ◽  
Hot Wall Epitaxy

Photoluminescence And The Optimum Growth Conditions Of High Quality ZnS Epitaxial Layers

1997 ◽  
Vol 487 ◽  
Author(s):  
Sungun Nam ◽  
Jongkwang Rhee ◽  
Young-Moon Yu ◽  
Byungsung O ◽  
Ki-Seon Lee ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Free Exciton ◽  
Growth Conditions ◽  
High Quality ◽  
Quenching Process ◽  
Exciton Scattering ◽  
Linewidth Broadening ◽  
Step Quenching ◽  
Hot Wall Epitaxy

AbstractHigh quality ZnS epilayers were grown on GaAs and GaP substrates by hot wall epitaxy. The optimum temperature conditions for high quality ZnS epilayer were found. The photoluminescence(PL) spectrum of high quality ZnS epilayers showed sharp and narrow exciton peaks and no self-activated peaks. The room temperature energy gap of ZnS/GaAs was found to be 3.729 eV from the experimentally observed free exciton PL peaks. The temperature dependence of the PL intensity showed a two step quenching process and the temperature dependence of the PL linewidth broadening was tried to analyze in terms of exciton scattering process. From the splitting of the heavy hole and the light hole exciton peaks, the strain was identified.

High-quality CdTe(100)/GaAs(100) grown by hot-wall epitaxy using gold tube radiation shield

1993 ◽  
Vol 130 (3-4) ◽  
pp. 617-621 ◽  
Author(s):  
J.-S. Hwang ◽  
B.J. Koo ◽  
I.H. Chung ◽  
H.L. Park ◽  
C.H. Chung
Keyword(s):  
Radiation Shield ◽  
High Quality ◽  
Hot Wall Epitaxy

High quality ZnTe‐ZnSe strained‐layer superlattice with buffer layer prepared by hot wall epitaxy

1989 ◽  
Vol 54 (3) ◽  
pp. 239-241 ◽  
Author(s):  
Y. H. Wu ◽  
H. Yang ◽  
A. Ishida ◽  
H. Fujiyasu ◽  
S. Nakashima ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Hot Wall Epitaxy
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