Growth and characterization of high-quality CdTe epilayers on GaAs substrates by hot-wall epitaxy

AbstractThe new technique of metalorganic magnetron sputtering (MOMS) produces high-quality (100) epitaxial InSb films on (100) GaAs substrates, despite the large 14.6% lattice mismatch between InSb and GaAs. We have used Raman scattering to examine MOMS-grown InSb films of thicknesses 0.17 - 2.67 µm, and commercial bulk InSb. We observe the longitudinal optical (LO) phonon peak, and the second order 2LO peak, which is enhanced by outgoing resonance with the E1 + Δ1, gap of InSb. The half-widths and intensities of these bands are related to sample quality as a function of film thickness and to the role of biaxial stress in the InSb film.

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Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6993 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6993-6997 ◽

Cited By ~ 7

Author(s):

Seiji Nakamura ◽

Shinsuke Takagimoto ◽

Tsuyoshi Ando ◽

Yoichi Yamada ◽

Tsunemasa Taguchi

Keyword(s):

Chemical Vapor Deposition ◽

Structural Characterization ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Epitaxial Layers ◽

High Quality ◽

Gaas Substrates ◽

Metalorganic Chemical

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Editorial for Special Issue “Historical Mineral Pigments”

Minerals ◽

10.3390/min11030237 ◽

2021 ◽

Vol 11 (3) ◽

pp. 237

Author(s):

Carolina Cardell ◽

Jose Santiago Pozo-Antonio

Keyword(s):

Chemical Characterization ◽

Glass Enamel ◽

Special Issue ◽

High Quality ◽

Physical Chemical ◽

Scientific Disciplines ◽

Natural And Synthetic

The physical–chemical characterization of natural and synthetic historical inorganic and mineral pigments, which may be found embedded in paintings (real or mock-ups), glass, enamel, ceramics, beads, tesserae, etc., as well as their alteration under different decay scenarios, is a demanding line of investigation. This field of research is now both well established and dynamic, as revealed by the numerous publications in high-quality journals of varied scientific disciplines. [...]

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Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.264-268.1201 ◽

1998 ◽

Vol 264-268 ◽

pp. 1201-1204

Author(s):

F. Hamdani ◽

M. Yeadon ◽

David John Smith ◽

H. Tang ◽

W. Kim ◽

...

Keyword(s):

High Quality

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Growth and characterization of high-quality GaInAs/AlInAs triple wells

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00486-8 ◽

2000 ◽

Vol 209 (1) ◽

pp. 8-14 ◽

Cited By ~ 5

Author(s):

Q.K Yang ◽

J.X Chen ◽

A.Z Li

Keyword(s):

High Quality

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Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

Journal of Crystal Growth ◽

10.1016/0022-0248(84)90441-x ◽

1984 ◽

Vol 68 (1) ◽

pp. 398-405 ◽

Cited By ~ 26

Author(s):

R.D. Dupuis ◽

R.C. Miller ◽

P.M. Petroff

Keyword(s):

Quantum Wells ◽

Single Quantum ◽

High Quality

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Characterization of a Non-Interdigitated Comb Drive

Volume 4: 23rd Design for Manufacturing and the Life Cycle Conference; 12th International Conference on Micro- and Nanosystems ◽

10.1115/detc2018-86271 ◽

2018 ◽

Author(s):

Mary Gopanchuk ◽

Mohamed Arabi ◽

N. Nelson-Fitzpatrick ◽

Majed S. Al-Ghamdi ◽

Eihab Abdel-Rahman ◽

...

Keyword(s):

Quality Factor ◽

Fundamental Frequency ◽

High Quality Factor ◽

Silicon On Insulator ◽

Comb Drive ◽

High Quality ◽

Sensor Applications ◽

Fabrication And Characterization

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.

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