Design of an a-Si:H(n)/GaAs(p)/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency

2002 ◽  
Vol 299-302 ◽  
pp. 1365-1369
Author(s):  
F.G Della Corte ◽  
F Pezzimenti
1989 ◽  
Vol 25 (16) ◽  
pp. 1047 ◽  
Author(s):  
F.E. Najjar ◽  
P.M. Enquist ◽  
D.B. Slater ◽  
M.Y. Chen ◽  
K.J. Linden

1988 ◽  
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pp. 405-407 ◽  
Author(s):  
T. Won ◽  
C.W. Litton ◽  
H. Morkoc ◽  
A. Yariv

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  

2002 ◽  
Vol 50 (4) ◽  
pp. 1101-1108 ◽  
Author(s):  
Zhenqiang Ma ◽  
S. Mohammadi ◽  
P. Bhattacharya ◽  
L.P.B. Katehi ◽  
S.A. Alterovitz ◽  
...  

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