High temperature (>400K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy
2002 ◽
Vol 122
(1-2)
◽
pp. 37-39
◽
2009 ◽
Vol 311
(7)
◽
pp. 2139-2142
◽
2000 ◽
Vol 7
(3-4)
◽
pp. 981-985
◽
2000 ◽
Vol 371
(1-2)
◽
pp. 272-277
◽
2011 ◽
Vol 314
(1)
◽
pp. 97-103
◽
2002 ◽
Vol 122
(12)
◽
pp. 651-653
◽
1997 ◽
Vol 36
(Part 2, No. 2A)
◽
pp. L73-L75
◽