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Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation
Solid-State Electronics
◽
10.1016/s0038-1101(99)00211-7
◽
2000
◽
Vol 44
(1)
◽
pp. 85-94
Author(s):
M. Hossin
◽
C.M. Johnson
◽
N.G. Wright
◽
A.G. O’Neill
Keyword(s):
Bipolar Transistor
◽
Electrothermal Simulation
Download Full-text
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MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING
Le Journal de Physique Colloques
◽
10.1051/jphyscol:19884122
◽
1988
◽
Vol 49
(C4)
◽
pp. C4-579-C4-582
Author(s):
J. G. METCALFE
◽
R. C. HAYES
◽
A. J. HOLDEN
◽
A. P. LONG
Keyword(s):
Microwave Power
◽
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◽
Heterojunction Bipolar Transistor
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Simulation of bipolar transistor 2T937 on the basis of experimental static and frequency characteristics
Izmeritel`naya Tekhnika
◽
10.32446/0368-1025it-2018-8-65-68
◽
2018
◽
pp. 65-68
◽
Cited By ~ 1
Author(s):
A. L. HVALIN
Keyword(s):
Frequency Characteristics
◽
Bipolar Transistor
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Analysis of dependence of dV CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor
Japanese Journal of Applied Physics
◽
10.35848/1347-4065/abd29f
◽
2021
◽
Vol 60
(SB)
◽
pp. SBBD02
Author(s):
Yoko Iwakaji
◽
Tomoko Matsudai
◽
Tatsunori Sakano
◽
Kazuto Takao
Keyword(s):
Bipolar Transistor
◽
Double Gate
◽
Insulated Gate Bipolar Transistor
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Zero current switching performance of 1200 V PT-clustered insulated gate bipolar transistor
3rd IET International Conference on Power Electronics, Machines and Drives (PEMD 2006)
◽
10.1049/cp:20060149
◽
2006
◽
Author(s):
J.C. Nicholls
◽
M.R. Sweet
◽
E.M.S. Narayanan
Keyword(s):
Bipolar Transistor
◽
Current Switching
◽
Insulated Gate Bipolar Transistor
◽
Switching Performance
◽
Zero Current Switching
◽
Zero Current
Download Full-text
PnP-type InP/InGaAsP/InP bipolar transistor
Electronics Letters
◽
10.1049/el:19850699
◽
1985
◽
Vol 21
(21)
◽
pp. 989
◽
Cited By ~ 1
Author(s):
L.M. Su
◽
H. Schroeter-Janssen
◽
K.C. Li
◽
N. Grote
Keyword(s):
Bipolar Transistor
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10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC
Electronics Letters
◽
10.1049/el:19900084
◽
1990
◽
Vol 26
(2)
◽
pp. 122
◽
Cited By ~ 2
Author(s):
J. Akagi
◽
Y. Kuriyama
◽
K. Morizuka
◽
M. Asaka
◽
K. Tsuda
◽
...
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Decision Circuit
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Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation
Electronics Letters
◽
10.1049/el:19900964
◽
1990
◽
Vol 26
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◽
pp. 1501
◽
Cited By ~ 8
Author(s):
L.L. Liou
◽
C.I. Huang
Keyword(s):
Boundary Condition
◽
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
One Dimensional
◽
Base Current
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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor
Electronics Letters
◽
10.1049/el:20020201
◽
2002
◽
Vol 38
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◽
pp. 289
◽
Cited By ~ 3
Author(s):
B.P. Yan
◽
C.C. Hsu
◽
X.Q. Wang
◽
E.S. Yang
Keyword(s):
Bipolar Transistor
◽
Heterojunction Bipolar Transistor
◽
Double Heterojunction
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Model-Order Reduction Procedure for Fast Dynamic Electrothermal Simulation of Power Converters
Lecture Notes in Electrical Engineering - Applications in Electronics Pervading Industry, Environment and Society
◽
10.1007/978-3-319-93082-4_11
◽
2018
◽
pp. 81-87
◽
Cited By ~ 6
Author(s):
A. P. Catalano
◽
M. Riccio
◽
L. Codecasa
◽
A. Magnani
◽
G. Romano
◽
...
Keyword(s):
Model Order Reduction
◽
Power Converters
◽
Order Reduction
◽
Reduction Procedure
◽
Model Order
◽
Electrothermal Simulation
◽
Fast Dynamic
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Insights into radiation displacement defect in an insulated-gate bipolar transistor
AIP Advances
◽
10.1063/5.0041444
◽
2021
◽
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◽
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◽
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Keyword(s):
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◽
Insulated Gate Bipolar Transistor
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