Low-temperature molecular beam epitaxy of Si1−x−yGexCy/Si quantum well structures: electrical and optical properties

1998 ◽  
Vol 321 (1-2) ◽  
pp. 26-32 ◽  
Author(s):  
D Grützmacher ◽  
R Hartmann ◽  
P Schnappauf ◽  
U Gennser ◽  
E Müller ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Well ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Quantum Well Structures

scholarly journals Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

1999 ◽  
Vol 85 (9) ◽  
pp. 6567-6570 ◽  
Author(s):  
P. A. Postigo ◽  
M. L. Dotor ◽  
P. Huertas ◽  
F. Garcı́a ◽  
D. Golmayo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Electrical And Optical Properties

scholarly journals Role of Sb in the growth and optical properties of 1.55μm GaInN(Sb)As∕GaNAs quantum-well structures by molecular-beam epitaxy

2005 ◽  
Vol 87 (18) ◽  
pp. 181908 ◽  
Author(s):  
H. D. Sun ◽  
S. Calvez ◽  
M. D. Dawson ◽  
J. A. Gupta ◽  
G. I. Sproule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures
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