Strain-enhanced arsenic precipitation in GaAs-based quantum-well structures grown by low-temperature molecular beam epitaxy
2006 ◽
Vol 18
(15)
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pp. 3897-3903
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2006 ◽
Vol 126
(1)
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pp. 86-92
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Keyword(s):
2017 ◽
Vol 17
(3)
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pp. 398-402
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Keyword(s):
Keyword(s):